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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV32EB-300PJDUAL ULTRAFAST POWER DIODE WeEn Semiconductors |
550 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 Pair Common Cathode | Standard | 300 V | 20A | 1.25 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 300 V | 175°C (Max) | Surface Mount |
|
BYQ28ED-200,118DIODE ARRAY GP 200V 10A DPAK WeEn Semiconductors |
2,598 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 1 Pair Common Cathode | Standard | 200 V | 10A | 1.25 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | 150°C (Max) | Surface Mount |
|
BYV410-600,127DIODE ARRAY GP 600V 20A TO220AB WeEn Semiconductors |
2,991 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 600 V | 20A | 2.1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | 150°C (Max) | Through Hole |
|
WNSC6D20650CW6QDUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors |
480 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 20A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 175°C | Through Hole |
|
|
BYQ28ED-200PLJDIODE ARRAY GP 200V 10A DPAK WeEn Semiconductors |
2,549 | - |
RFQ |
データシート |
Tape & Reel (TR) | - | Active | 1 Pair Common Cathode | Standard | 200 V | 10A | 1.1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | 150°C (Max) | Surface Mount |
|
WNS20S100CXQSCHOTTKY POWER DIODE WeEn Semiconductors |
3,194 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 100 V | 10A | 950 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 150°C (Max) | Through Hole |
|
BYV32EB-200PJDIODE ARRAY GP 200V 20A D2PAK WeEn Semiconductors |
2,318 | - |
RFQ |
データシート |
Tape & Reel (TR) | - | Active | 1 Pair Common Cathode | Standard | 200 V | 20A | 1.15 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 175°C (Max) | Surface Mount |
|
|
BYV32E-300PQDUAL ULTRAFAST POWER DIODE WeEn Semiconductors |
2,323 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 300 V | 10A | 1.25 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 300 V | 175°C (Max) | Through Hole |
|
BYV32E-200PQDIODE ARRAY GP 200V 10A TO220AB WeEn Semiconductors |
3,968 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 200 V | 10A | 850 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 175°C (Max) | Through Hole |
|
|
BYQ42E-200QDIODE ARRAY GP 200V 15A TO220AB WeEn Semiconductors |
3,885 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 200 V | 15A | 1.05 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 20 µA @ 200 V | 150°C (Max) | Through Hole |
|
|
WNS40H100CGQSCHOTTKY POWER DIODE WeEn Semiconductors |
3,061 | - |
RFQ |
データシート |
Tube | - | Active | - | Schottky | 100 V | 20A | 710 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 150°C (Max) | Through Hole |
|
|
BYQ72EK-200QDIODE ARRAY GP 200V 15A TO3P WeEn Semiconductors |
2,750 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 200 V | 15A | 900 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 20 µA @ 600 V | 150°C (Max) | Through Hole |
|
|
BYQ72EW-200QDIODE ARRAY GP 200V 15A TO247-3 WeEn Semiconductors |
3,304 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 200 V | 15A | 900 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 20 µA @ 200 V | 150°C (Max) | Through Hole |
|
|
BYV430J-600PQDIODE ARRAY GP 600V 30A TO3P WeEn Semiconductors |
2,429 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 175°C (Max) | Through Hole |
|
|
BYV415J-600PQDIODE TO3PF STANDARD M WeEn Semiconductors |
3,330 | - |
RFQ |
データシート |
Tube | - | Active | - | - | - | - | - | - | - | - | - | Through Hole |
|
|
BYV430K-300PQDIODE ARRAY GP 300V 30A TO3P WeEn Semiconductors |
3,637 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 300 V | 30A | 1.25 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 300 V | 175°C (Max) | Through Hole |
|
|
BYV430W-300PQDIODE ARRAY GP 300V 30A TO247-3 WeEn Semiconductors |
3,167 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 300 V | 30A | 1.25 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 175°C (Max) | Through Hole |
|
|
BYV430W-600PQULTRAFAST POWER DIODE WeEn Semiconductors |
3,422 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 175°C (Max) | Through Hole |
|
|
NXPSC20650W-AQSILICON CARBIDE POWER DIODE WeEn Semiconductors |
3,280 | - |
RFQ |
データシート |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 20A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 175°C (Max) | Through Hole |
|
|
WNSC2D401200CW6QDUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors |
3,183 | - |
RFQ |
データシート |
Tape & Reel (TR) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 40A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 2000 V | 175°C | Through Hole |
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