写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
PC4D30120H1200V SCHOTTKY Wolfspeed, Inc. |
3,936 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | |
![]() |
SK30100CD2-3GSchottky Diode, D2PAK, 100V, 30A Diotec Semiconductor |
2,767 | - |
RFQ |
![]() データシート |
Tube,Tube | - | Active | 1 Pair Common Cathode | Schottky | 100 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | -50°C ~ 150°C | Surface Mount |
![]() |
30CTQ045SSchottkyD, 45V, 30A Diotec Semiconductor |
2,026 | - |
RFQ |
![]() データシート |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 45 V | 15A | 620 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | -50°C ~ 175°C | Surface Mount |
![]() |
MBR60L45WTGRECTIFIER DIODE, SCHOTTKY, 1 PHA onsemi |
3,830 | - |
RFQ |
![]() データシート |
Bulk | SWITCHMODE™ | Active | 1 Pair Common Cathode | Schottky | 45 V | 30A | 550 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2 mA @ 45 V | -65°C ~ 175°C | Through Hole |
![]() |
G3S06506BSIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology-GPT |
3,072 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology-GPT |
3,870 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology-GPT |
2,132 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology-GPT |
3,052 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology-GPT |
2,864 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
AS3D020120P21200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,162 | - |
RFQ |
![]() データシート |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 30A (DC) | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
DPAD10 TO-72 4LLOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc. |
3,994 | - |
RFQ |
![]() データシート |
Bulk | DPAD | Active | 2 Independent | Standard | 45 V | 50mA | 1.5 V @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | -55°C ~ 150°C | Through Hole |
![]() |
G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT |
3,219 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
DPAD50 TO-72 4LLOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc. |
2,735 | - |
RFQ |
![]() データシート |
Bulk | DPAD | Active | 2 Independent | Standard | 45 V | 50mA | 1.5 V @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | -55°C ~ 150°C | Through Hole |
![]() |
G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI Global Power Technology-GPT |
2,610 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT |
3,394 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT |
3,140 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
![]() |
AS3D040120P21200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,518 | - |
RFQ |
![]() データシート |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 52A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT |
2,171 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT |
2,302 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
![]() |
G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT |
2,995 | - |
RFQ |
![]() データシート |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |