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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-307UA250P4DIODE GEN PURP 2.5KV 300A DO9 Vishay General Semiconductor - Diodes Division |
2,200 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 2500 V | 300A | -40°C ~ 180°C | 1.46 V @ 942 A | |
|
VS-86HFR10DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,033 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-307URA250P4DIODE GEN PURP 2.5KV 300A DO9 Vishay General Semiconductor - Diodes Division |
3,562 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 2500 V | 300A | -40°C ~ 180°C | 1.46 V @ 942 A | ||
|
VS-SD803C10S10CDIODE GEN PURP 1KV 845A B-43 Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 1 µs | 45 mA @ 1000 V | 1000 V | 845A | - | 1.89 V @ 2655 A | |
|
VS-87HFLR20S02DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | ||
|
|
VS-86HF80DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 800 V | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-71HFR120DIODE GEN PURP 1.2KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,936 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 1200 V | 1200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
SS5P4-M3/86ADIODE SCHOTTKY 40V 5A TO277A Vishay General Semiconductor - Diodes Division |
55,024 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 250 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 520 mV @ 5 A |
|
VS-10MQ100NTRPBFDIODE SCHOTTKY 100V 1A SMA Vishay General Semiconductor - Diodes Division |
8,428 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 38pF @ 10V, 1MHz | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 780 mV @ 1 A | |
|
SB560-E3/54DIODE SCHOTTKY 60V 5A DO201AD Vishay General Semiconductor - Diodes Division |
67,887 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | |
|
|
VS-70HFR100DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
VS-87HFL60S02DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,687 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | ||
|
|
VS-87HFLR60S02DIODE GEN PURP 60V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,121 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 60 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | ||
|
|
UF5408-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
16,224 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
SS8PH10-M3/86ADIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
6,117 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 2 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 900 mV @ 8 A |
|
BYV26C-TAPDIODE AVALANCHE 600V 1A SOD57 Vishay General Semiconductor - Diodes Division |
26,958 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
|
BYV26C-TRDIODE AVALANCHE 600V 1A SOD57 Vishay General Semiconductor - Diodes Division |
10,915 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
|
BY448TRDIODE AVALANCHE 1500V 2A SOD57 Vishay General Semiconductor - Diodes Division |
14,419 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 20 µs | 3 µA @ 1500 V | 1500 V | 2A | 140°C (Max) | 1.6 V @ 3 A | |
|
|
SS8PH10HM3_A/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,308 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 4V, 1MHz | - | 2 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 900 mV @ 8 A |
|
|
BYV26E-TRDIODE AVALANCHE 1000V 1A SOD57 Vishay General Semiconductor - Diodes Division |
31,544 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A |
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