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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-30EPF02-M3DIODE GEN PURP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 100 µA @ 200 V | 200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
V8P45HM3_A/HDIODE SCHOTTKY 45V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,789 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 600 µA @ 45 V | 45 V | 8A | -40°C ~ 150°C | 580 mV @ 8 A |
|
VS-20MQ060NTRPBFDIODE SCHOTTKY 60V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,698 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 31pF @ 10V, 1MHz | - | 500 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 780 mV @ 2 A | |
|
|
VS-30EPF04-M3DIODE GEN PURP 400V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,496 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 400 V | 400 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
SS10P3-M3/87ADIODE SCHOTTKY 30V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
データシート |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 30 V | 30 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
|
|
VS-30EPF06-M3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,160 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
|
UH4PBCHM3_A/IDIODE GEN PURP 100V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,784 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
VS-30EPF10-M3DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,529 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1000 V | 1000 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
BYWB29-200-E3/81DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
770 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
BYV28-200-TRDIODE AVALANCHE 200V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
278 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 1 µA @ 200 V | 200 V | 3.5A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
SB260-E3/73DIODE SCHOTTKY 60V 2A DO204AC Vishay General Semiconductor - Diodes Division |
1,808 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
|
|
GPP20M-E3/73DIODE GEN PURP 1KV 2A DO204AC Vishay General Semiconductor - Diodes Division |
1,653 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
BYW74-L36DIODE AVAL 3A 400V SOD64 Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | - | - | 200 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
UH4PCCHM3_A/IDIODE GEN PURP 150V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,017 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
VS-20ETF12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,296 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
VS-8EWS08STRR-M3DIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS12STRL-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,065 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
VS-HFA25TB60HN3DIODE GEN PURP 600V 25A TO220AC Vishay General Semiconductor - Diodes Division |
3,677 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
|
US1KHE3_A/HDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
1,597 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
VS-8EWS12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
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