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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GL41A/54DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,673 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
MUR1520DIODE GEN PURP 200V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,469 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
8EWF04SDIODE GEN PURP 400V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,214 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 140 ns | 100 µA @ 200 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
RGL41G/1DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,099 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GL41B/54DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MUR820DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A | |
|
|
8EWF06SDIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,081 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 140 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
V3FM15-M3/H3A,150V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
14,450 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 85 µA @ 150 V | 150 V | 3A | -40°C ~ 175°C | 1.24 V @ 3 A |
|
|
RGL41M/1DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,608 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GL41D/54DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,160 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
HFA08PB120DIODE GEN PURP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division |
3,411 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
|
8EWF06STRLDIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,645 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 140 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
RGP02-20E/54DIODE GEN PURP 2KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,497 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
|
GL41G/54DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,262 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
HFA30PB120DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,659 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 170 ns | 40 µA @ 1200 V | 1200 V | 30A | -55°C ~ 150°C | 4.1 V @ 30 A |
|
|
8EWS08SDIODE GEN PURP 800V 8A DPAK Vishay General Semiconductor - Diodes Division |
2,568 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
RS2G/1DIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,312 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
GL41M/54DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,346 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
10TQ035SDIODE SCHOTTKY 35V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,162 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
|
8EWS12SDIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division |
2,373 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
- 1500+ 日平均RFQ
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