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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESH2BHE3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,047 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
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SS2P6HE3/85ADIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
GP10D-4003HE3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,775 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
S1BHE3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,470 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
ESH2CHE3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
|
SS2PH10-E3/85ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,501 | - |
RFQ |
データシート |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
GP10G-4004EHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
|
S1DA-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,288 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SS2PH10HE3/85ADIODE SCHOTTKY 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,959 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
GP10G-4004HE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,703 | - |
RFQ |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
|
S1DHE3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,637 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SS2PH9-E3/85ADIODE SCHOTTKY 90V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
データシート |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
GP10J-4005EHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,249 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | ||
|
|
S1GA-E3/61TDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,843 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SS2PH9HE3/85ADIODE SCHOTTKY 90V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,823 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q100, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 65pF @ 4V, 1MHz | - | 1 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 800 mV @ 2 A |
|
|
GP10J-4005HE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,705 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | ||
|
|
S1JA-E3/61TDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,055 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
MBR745-E3/45DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
980 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 175°C | 840 mV @ 15 A | |
|
|
BYG21K-E3/TR3DIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division |
4,033 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
|
VS-MBR1035-M3DIODE SCHOTTKY 35V 10A TO220AC Vishay General Semiconductor - Diodes Division |
453 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 600pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A |
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