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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP10-4004HM3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,062 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
M100M-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,051 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
RGP30MHE3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,514 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 500 ns | 5 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
GP10G-4004-M3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,404 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
MBRB1035-E3/81DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,955 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
RGP5020-E3/54DIODE GEN PURP 200V 500MA AXIAL Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 200 V | 500mA | - | - | ||
|
|
GP10-4005E-E3/53DIODE GEN PURP 500V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,001 | - |
RFQ |
データシート |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 500 V | 500 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRB1035HE3/81DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,475 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
RGP5020HE3/54DIODE GEN PURP 200V 500MA AXIAL Vishay General Semiconductor - Diodes Division |
3,288 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 200 V | 500mA | - | - | ||
|
|
GP10-4005EHE3/53DIODE GEN PURP 500V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,037 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 500 V | 500 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRB1045HE3/81DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,559 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
|
RGP5100-E3/54DIODE GEN PURP 1KV 500MA AXIAL Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 1000 V | 500mA | - | - | ||
|
MSS2P3-M3/89ADIODE SCHOTTKY 30V 2A MICROSMP Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | - | 250 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 600 mV @ 2 A |
|
SS24-E3/52TDIODE SCHOTTKY 40V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,905 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
BAT46W-E3-08DIODE SCHOTTKY 100V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
2,401 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 0V, 1MHz | - | 5 µA @ 75 V | 100 V | 150mA (DC) | 125°C (Max) | 1 V @ 250 mA | |
|
VS-C4PH3006LHN3DIODE GEN PURP 600V 15A TO247AD Vishay General Semiconductor - Diodes Division |
400 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 15 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.9 V @ 15 A |
|
|
GP10-4005EHM3/73DIODE GEN PURP 500V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,421 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 500 V | 500 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
MBRB1050-E3/81DIODE SCHOTTKY 50V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,414 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
RGP5100HE3/54DIODE GEN PURP 1KV 500MA AXIAL Vishay General Semiconductor - Diodes Division |
2,465 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 1000 V | 500mA | - | - | ||
|
|
ES2D-E3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,283 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
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