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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NS8KTHE3/45DIODE GEN PURP 800V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,777 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
RGP10DE-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,255 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-80APF12PBFDIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,783 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 80A | -40°C ~ 150°C | 1.35 V @ 80 A | ||
|
|
NS8MTHE3/45DIODE GEN PURP 1KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
SE20AFG-M3/6ADIODE GEN PURP 400V 2A DO221AC Vishay General Semiconductor - Diodes Division |
283 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 2A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
BYG10G-E3/TR3DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
276 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
BAS85-GS08DIODE SCHOTTKY 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
2,289 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA | |
|
S3G-E3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
1,682 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
B240A-E3/5ATDIODE SCHOTTKY 40V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,271 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 550 mV @ 2 A | |
|
SS2FL4-M3/HDIODE SCHOTTKY 40V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
258 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 125pF @ 4V, 1MHz | - | 220 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 580 mV @ 2 A |
|
LL101A-GS08DIODE SCHOTTKY 60V 30MA SOD80 Vishay General Semiconductor - Diodes Division |
3,258 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 50 V | 60 V | 30mA (DC) | 125°C (Max) | 410 mV @ 1 mA | |
|
|
RGP10DHM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,228 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VS-30BQ015-M3/9ATDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
3,438 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1120pF @ 5V, 1MHz | - | 4 mA @ 15 V | 15 V | 3A | -55°C ~ 125°C | 350 mV @ 3 A | |
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|
V2P6LHM3/HSCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division |
684 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 255pF @ 4V, 1MHz | - | 480 µA @ 60 V | 60 V | 2A (DC) | -40°C ~ 150°C | 600 mV @ 2 A |
|
|
VS-80APS08PBFDIODE GEN PURP 800V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,400 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 800 V | 800 V | 80A | -40°C ~ 150°C | 1.17 V @ 80 A | ||
|
NSB8ATHE3/45DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,315 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
V30K45-M3/HDIODE SCHOTTKY 30A 45V FLATPAK Vishay General Semiconductor - Diodes Division |
2,231 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4000pF @ 4V, 1MHz | - | 2 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 630 mV @ 30 A |
|
|
RGP10D-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,839 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VS-80APS12PBFDIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,618 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 80A | -40°C ~ 150°C | 1.17 V @ 80 A | ||
|
|
NSB8BTHE3/45DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,572 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
- 1500+ 日平均RFQ
- 20,000.000 標準製品ユニット
- 1800+ 世界中のメーカー
- 15,000+ 在庫倉庫
