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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRB16H45-E3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
2,298 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
MBRB16H50-E3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
MBRB16H50HE3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
3,574 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
MBRB7H35-E3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
2,598 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
MBRB7H35HE3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
MBRB7H45-E3/45DIODE SCHOTTKY TO-263AB Vishay General Semiconductor - Diodes Division |
2,741 | - |
RFQ |
データシート |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
1N5399GP-E3/54DIODE GEN PURP 1KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
2,639 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1.5A | -65°C ~ 175°C | 1.4 V @ 1.5 A | |
|
ES3D-E3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,150 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
1N6484-E3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,833 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
BAV102-GS08DIODE GEN PURP 200V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
3,713 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
1N5615GP-E3/54DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
ES3G-E3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,173 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BAV101-GS08DIODE GEN PURP 100V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
1N4448W-HE3-08DIODE GEN PURP 75V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
3,653 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 720 mV @ 5 mA |
|
|
1N5619GP-E3/54DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,838 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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|
SS1P4LHM3/84ADIODE SCHOTTKY 40V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
2,043 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 1.5A | -55°C ~ 150°C | 480 mV @ 1 A |
|
MCL4151-TRDIODE GEN PURP 75V 200MA MICMELF Vishay General Semiconductor - Diodes Division |
3,283 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 75 V | 200mA | 125°C (Max) | 1 V @ 50 mA |
|
1N4448WS-HE3-08DIODE GEN PURP 75V 150MA SOD323 Vishay General Semiconductor - Diodes Division |
2,286 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 720 mV @ 5 mA |
|
|
1N5617GP-E3/54DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,051 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
SB3H100-E3/73DIODE SCHOTTKY 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,507 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 20 µA @ 100 V | 100 V | 3A | 175°C (Max) | 800 mV @ 3 A |
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