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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SD103A-TRDIODE SCHOTTKY 40V DO35 Vishay General Semiconductor - Diodes Division |
3,426 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | - | 125°C (Max) | 600 mV @ 200 mA | |
|
IMBD4148-E3-08DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
2,186 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | -55°C ~ 150°C | 1 V @ 10 mA | |
|
BYV26B-TRDIODE AVALANCHE 400V 1A SOD57 Vishay General Semiconductor - Diodes Division |
3,551 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
MURS340-E3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,502 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
|
GSD2004W-E3-08DIODE GEN PURP 240V 225MA SOD123 Vishay General Semiconductor - Diodes Division |
2,901 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 240 V | 240 V | 225mA (DC) | 150°C (Max) | 1 V @ 100 mA | |
|
SBYV28-200-E3/54DIODE GEN PURP 200V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,001 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
BAV19W-E3-08DIODE GEN PURP 100V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
2,300 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
V10P12HM3_A/HDIODE GEN PURP 120V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,798 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A |
|
|
SD103AW-E3-18DIODE SCHOTTKY 40V SOD123 Vishay General Semiconductor - Diodes Division |
2,499 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | - | 125°C (Max) | 600 mV @ 200 mA | |
|
VS-30WQ06FNTR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,594 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
|
BAV20W-E3-08DIODE GEN PURP 150V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
V20150SGHM3/4WDIODE SCHOTTKY 20A 150V TO-220AB Vishay General Semiconductor - Diodes Division |
3,398 | - |
RFQ |
データシート |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
|
VS-10WT10FNTRRDIODE SCHOTTKY 100V 10A DPAK Vishay General Semiconductor - Diodes Division |
2,292 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 400pF @ 5V, 1MHz | - | 50 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 810 mV @ 10 A | |
|
|
VS-30WQ03FNTR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,001 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 290pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
BYG10YHM3_A/I1.5A,1600V,STD,AVALANCHE,SMD Vishay General Semiconductor - Diodes Division |
2,497 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A (DC) | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
V12PM15HM3/HDIODE SCHOTTKY TMBS 12A 150V SMP Vishay General Semiconductor - Diodes Division |
2,573 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 12A | -40°C ~ 175°C | 1.08 V @ 12 A |
|
|
UF5406-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,758 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
S1K-E3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,890 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
S1FLM-GS18DIODE GEN PURP 1KV 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,096 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
V12P6-M3/86ADIODE SCHOTTKY 60V 4.6A TO277A Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.9 mA @ 60 V | 60 V | 4.6A | -40°C ~ 150°C | 610 mV @ 12 A |
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