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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S3AHE3_A/HDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,539 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
S3DHE3_A/HDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,127 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
S3KHE3_A/HDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,560 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
1N5817-E3/53DIODE SCHOTTKY 20V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,227 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 125pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 750 mV @ 3.1 A | |
|
VS-245NQ015PBFDIODE SCHOTTKY 15V 240A D-67 Vishay General Semiconductor - Diodes Division |
2,608 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 15800pF @ 5V, 1MHz | - | 80 mA @ 15 V | 15 V | 240A | - | 520 mV @ 240 A | |
|
|
VS-85HFL100S05MDIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 120 ns | - | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | |
|
|
VS-85HFLR100S05MDIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 120 ns | - | 1000 V | 85A | -40°C ~ 125°C | 1.75 V @ 267 A | ||
|
VS-150KR20ADIODE GEN PURP 200V 150A DO205AA Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 35 mA @ 200 V | 200 V | 150A | -40°C ~ 200°C | 1.33 V @ 471 A | |
|
VS-T85HF10DIODE GEN PURP 100V 85A D-55 Vishay General Semiconductor - Diodes Division |
2,006 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 100 V | 100 V | 85A | - | - | |
|
|
VS-183NQ100PBFDIODE SCHOTTKY 100V 180A D-67 Vishay General Semiconductor - Diodes Division |
3,473 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 4150pF @ 5V, 1MHz | - | 4.5 mA @ 100 V | 100 V | 180A | - | 910 mV @ 180 A | |
|
|
VS-T85HF20DIODE GEN PURP 200V 85A D-55 Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 200 V | 200 V | 85A | - | - | |
|
|
VS-T40HFL20S05DIODE GEN PURP 200V 40A D-55 Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 100 µA @ 200 V | 200 V | 40A | - | - | |
|
|
U3B-M3/9ATDIODE GEN PURP 100V 2A DO214AB Vishay General Semiconductor - Diodes Division |
3,498 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
U3C-M3/9ATDIODE GEN PURP 150V 2A DO214AB Vishay General Semiconductor - Diodes Division |
3,787 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
U3D-M3/9ATDIODE GEN PURP 200V 2A DO214AB Vishay General Semiconductor - Diodes Division |
2,477 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
U3B-M3/57TDIODE GEN PURP 100V 2A DO214AB Vishay General Semiconductor - Diodes Division |
2,969 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
U3C-M3/57TDIODE GEN PURP 150V 2A DO214AB Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 150 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
U3D-M3/57TDIODE GEN PURP 200V 2A DO214AB Vishay General Semiconductor - Diodes Division |
3,604 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
S1AHE3_A/IDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,945 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S1BHE3_A/IDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,224 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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