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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR3200-D1-0000DIODE SCHOTTKY 200V 3A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,738 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
SR3150-D1-0000DIODE SCHOTTKY 150V 3A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,925 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 80pF @ 4V, 1MHz | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
SR340-D1-0000DIODE SCHOTTKY 40V 3A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,928 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 180pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 550 mV @ 3 A | |
|
MUR860-B1-0000HFDIODE GEN PURP 600V 8A TO220AC Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,899 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.6 V @ 8 A | |
|
|
MUR840-B1-0000HFDIODE GEN PURP 400V 8A TO220AC Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,588 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.25 V @ 8 A | |
|
FR107G-D1-3000DIODE GEN PURP 1000V 1A DO204AL Yangzhou Yangjie Electronic Technology Co.,Ltd |
49,890 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 2.5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
MUR460-D1-0000DIODE GEN PURP 600V 4A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd |
1,050 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 51pF @ 4V, 1MHz | 50 ns | 2.5 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.28 V @ 4 A | |
|
E2JF-F1-0000HFDIODE GEN PURP 600V 2A SMAF Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,000 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
HS2J-F1-0000HFDIODE GEN PURP 600V 2A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,990 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
1N5408G-D1-0000DIODE GEN PURP 1000V 3A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd |
12,490 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | - | 2.5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
E1JF-F1-0000HFDIODE GEN PURP 600V 1A SMAF Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,008 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
F1M-F1-3000HFDIODE GEN PURP 1000V 1A SOD123FL Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,440 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
GS2MA-F1-0000HFDIODE GEN PURP 1000V 2A DO214AC Yangzhou Yangjie Electronic Technology Co.,Ltd |
1,190 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
GR3MB-F1-0000HFDIODE GEN PURP 1000V 3A DO214AA Yangzhou Yangjie Electronic Technology Co.,Ltd |
260 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 500 ns | 5 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
1N4448W-F2-0000HFDIODE GEN PURP 100V 250MA SOD123 Yangzhou Yangjie Electronic Technology Co.,Ltd |
658 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 200 nA @ 75 V | 100 V | 250mA | -55°C ~ 150°C | 1 V @ 100 mA |
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