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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N6621UDIODE GEN PURP 400V 1.2A A-MELF Microchip Technology |
2,160 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 400 V | 400 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
JANTX1N5711UR-1/TRSCHOTTKY Microchip Technology |
3,158 | - |
RFQ |
データシート |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 33mA | -65°C ~ 150°C | 1 V @ 15 mA |
|
JANTX1N5419/TRRECTIFIER UFR,FRR Microchip Technology |
3,893 | - |
RFQ |
データシート |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
JAN1N6621USDIODE GEN PURP 440V 2A D5A Microchip Technology |
3,994 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/116 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2.8pF @ 1.5V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | |
|
JANTX1N5420US/TRRECTIFIER UFR,FRR Microchip Technology |
2,289 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
|
JANTXV1N5615DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
3,875 | - |
RFQ |
データシート |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 12V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
JAN1N6622UDIODE GEN PURP 600V 1.2A A-MELF Microchip Technology |
2,456 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 600 V | 600 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
1N6857UR-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,796 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 4.5pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | 150mA | -65°C ~ 150°C | 750 mV @ 35 mA | |
|
|
JAN1N6622USDIODE GEN PURP 660V 2A D5A Microchip Technology |
2,066 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
|
HSM1100GE3/TR13DIODE SCHOTTKY 100V 1A DO215AA Microchip Technology |
3,088 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
|
1N6620USDIODE GEN PURP 220V 1.2A A-MELF Microchip Technology |
2,077 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 220 V | 220 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
|
JAN1N5417USDIODE GEN PURP 200V 3A B-MELF Microchip Technology |
3,180 | - |
RFQ |
データシート |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
JAN1N6624UDIODE GEN PURP 900V 1A A-MELF Microchip Technology |
3,668 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 500 nA @ 900 V | 900 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
HSM120GE3/TR13DIODE SCHOTTKY 1A 20V SMBG Microchip Technology |
2,996 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
HSM1100JE3/TR13DIODE SCHOTTKY 100V 1A DO214BA Microchip Technology |
2,581 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
|
1N6621USDIODE GEN PURP 440V 1.2A A-MELF Microchip Technology |
3,918 | - |
RFQ |
データシート |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 440 V | 440 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
JANTXV1N4248/TRRECTIFIER UFR,FRR Microchip Technology |
3,844 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
JAN1N6624USDIODE GEN PURP 990V 1A D5A Microchip Technology |
3,467 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 50 ns | 500 nA @ 990 V | 990 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
1N5822DIODE SCHOTTKY 40V 3A AXIAL Microchip Technology |
3,805 | - |
RFQ |
データシート |
Bulk | Military, MIL-PRF-19500/620 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A |
|
|
HSM130GE3/TR13DIODE SCHOTTKY 1A 30V SMBG Microchip Technology |
2,622 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
- 1500+ 日平均RFQ
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