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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V10PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,890 | - |
RFQ |
データシート |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A |
|
AS3PM-M3/86ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
RM 11AV1DIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,296 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
CDBA140LL-GDIODE SCHOTTKY 40V 1A DO214AC Comchip Technology |
2,502 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -20°C ~ 80°C | 340 mV @ 1 A | |
|
|
CMH04(TE12L,Q,M)DIODE GEN PURP 200V 1A MFLAT Toshiba Semiconductor and Storage |
2,619 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
BYT54B-TAPDIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,590 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 100 V | 100 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
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|
SGL41-50HE3/97DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,091 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
AS3PK-M3/86ADIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,689 | - |
RFQ |
データシート |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
RO 2V1DIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,168 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.5 A | |
|
|
ACGRBT301-HFDIODE GEN PURP 200V 3A DO214AA Comchip Technology |
3,776 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | 23pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1 V @ 3 A |
|
|
SBR1A40S3Q-7DIODE SBR 40V 1A SOD323 Diodes Incorporated |
2,375 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 550 mV @ 1 A |
|
|
BYV12-TAPDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,548 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
SGL41-60HE3/97DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,613 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
AS4PG-M3/86ADIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,420 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
RS 1AV1DIODE GEN PURP 600V 700MA AXIAL Sanken |
2,423 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 600 V | 600 V | 700mA | -40°C ~ 150°C | 2.5 V @ 800 mA | |
|
S4J V6GDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
3,275 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 100 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | - | |
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|
SS1P3LHM3/85ADIODE SCHOTTKY 30V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1.5A | -55°C ~ 150°C | 450 mV @ 1 A |
|
|
BYV37-TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,698 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SGL41-50HE3/96DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,177 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
ES3AHE3_A/IDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,793 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
- 1500+ 日平均RFQ
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- 1800+ 世界中のメーカー
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