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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AR4PG-M3/86ADIODE AVALANCHE 400V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 4 A |
|
AK 06VDIODE SCHOTTKY 60V 700MA AXIAL Sanken |
3,317 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 60 V | 60 V | 700mA | -40°C ~ 150°C | 620 mV @ 700 mA | |
|
|
AS3PJHM3_A/HDIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,030 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
|
SD040SC200A.T1PIV 200V IO 1A CHIP SIZE 40MIL S SMC Diode Solutions |
2,200 | - |
RFQ |
データシート |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 20pF @ 5V, 1MHz | - | 30 µA @ 200 V | 200 V | 1A | -55°C ~ 200°C | 920 mV @ 1 A | |
|
|
SS84C-HFDIODE SCHOTTKY 8A 40V SMC Comchip Technology |
2,909 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 600pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 8A | -55°C ~ 150°C | 550 mV @ 8 A | |
|
SR1010-TPDIODE SCHOTTKY 100V 1A DO41 Micro Commercial Co |
3,945 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 125°C | 850 mV @ 1 A | |
|
VBT1045BP-E3/4WDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,996 | - |
RFQ |
データシート |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 10A (DC) | 200°C (Max) | 680 mV @ 10 A |
|
|
AK 09VDIODE SCHOTTKY 90V 700MA AXIAL Sanken |
3,148 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 90 V | 90 V | 700mA | -40°C ~ 150°C | 810 mV @ 700 mA | |
|
|
AS3PJHM3_A/IDIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
|
S15KCHDIODE GEN PURP 800V 15A DO214AB Taiwan Semiconductor Corporation |
2,313 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 15A (DC) | -55°C ~ 150°C | 1.1 V @ 15 A | |
|
ES3F-M3/57TDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
GP02-20-E3/73DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
データシート |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
FMXA-1054SDIODE GEN PURP 400V 5A TO220F-2L Sanken |
2,165 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 50 µA @ 400 V | 400 V | 5A | -40°C ~ 150°C | 1.5 V @ 5 A | |
|
CMR3U-06 TR13 PBFREEDIODE GEN PURP 600V 3A SMC Central Semiconductor Corp |
3,965 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.4 V @ 3 A | |
|
|
AS3PKHM3_A/HDIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,330 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
|
SK84CHDIODE SCHOTTKY 40V 8A DO214AB Taiwan Semiconductor Corporation |
2,757 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | |
|
|
ES3G-M3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
|
CPW2-1200-S010BPDIODE SCHOTTKY 1200V 10A Wolfspeed, Inc. |
3,569 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
CLLR1F-06 TRTRANSISTOR Central Semiconductor Corp |
3,933 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A | ||
|
|
CPW2-1200-S010B-SKDIODE SCHOTTKY 1200V 10A Wolfspeed, Inc. |
2,956 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - |
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