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写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
6A20GHA0G

6A20GHA0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation
3,709 -

RFQ

6A20GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3D V7G

RS3D V7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation
3,398 -

RFQ

RS3D V7G

データシート

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C -
F1T2G A1G

F1T2G A1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,178 -

RFQ

F1T2G A1G

データシート

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A40G A0G

6A40G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation
3,804 -

RFQ

6A40G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3G V7G

RS3G V7G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation
3,672 -

RFQ

RS3G V7G

データシート

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 150 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C -
F1T2GHA1G

F1T2GHA1G

DIODE GEN PURP 100V 1A TS-1

Taiwan Semiconductor Corporation
3,531 -

RFQ

F1T2GHA1G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A40GHA0G

6A40GHA0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation
2,043 -

RFQ

6A40GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3K V7G

RS3K V7G

DIODE GEN PURP 800V 3A DO214AB

Taiwan Semiconductor Corporation
3,039 -

RFQ

RS3K V7G

データシート

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C -
F1T3G A1G

F1T3G A1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
3,344 -

RFQ

F1T3G A1G

データシート

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A60G A0G

6A60G A0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation
2,188 -

RFQ

6A60G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
RS3M V7G

RS3M V7G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation
3,482 -

RFQ

RS3M V7G

データシート

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 1000 V - 3A -55°C ~ 150°C -
F1T3GHA1G

F1T3GHA1G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation
2,460 -

RFQ

F1T3GHA1G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A60GHA0G

6A60GHA0G

DIODE GEN PURP 600V 6A R-6

Taiwan Semiconductor Corporation
3,396 -

RFQ

6A60GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 6A -55°C ~ 150°C 1 V @ 6 A
S3A V6G

S3A V6G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation
2,389 -

RFQ

S3A V6G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T4G A1G

F1T4G A1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation
2,398 -

RFQ

F1T4G A1G

データシート

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A80G A0G

6A80G A0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation
2,155 -

RFQ

6A80G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
S3A V7G

S3A V7G

DIODE GEN PURP 50V 3A DO214AB

Taiwan Semiconductor Corporation
3,537 -

RFQ

S3A V7G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 3A -55°C ~ 150°C -
F1T4GHA1G

F1T4GHA1G

DIODE GEN PURP 400V 1A TS-1

Taiwan Semiconductor Corporation
3,682 -

RFQ

F1T4GHA1G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
6A80GHA0G

6A80GHA0G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation
2,393 -

RFQ

6A80GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 6A -55°C ~ 150°C 1 V @ 6 A
S3B V6G

S3B V6G

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation
3,246 -

RFQ

S3B V6G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 3A -55°C ~ 150°C -
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1500+
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20,000.000 標準製品ユニット
1800+
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15,000+
15,000+ 在庫倉庫
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