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写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SRAF1040 C0G

SRAF1040 C0G

DIODE SCHOTTKY 40V 10A ITO220AC

Taiwan Semiconductor Corporation
2,244 -

RFQ

SRAF1040 C0G

データシート

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5393GHA0G

1N5393GHA0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,763 -

RFQ

1N5393GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1040HC0G

SRAF1040HC0G

DIODE SCHOTTKY 40V 10A ITO220AC

Taiwan Semiconductor Corporation
3,708 -

RFQ

SRAF1040HC0G

データシート

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 10 A
1N5395G A0G

1N5395G A0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,808 -

RFQ

1N5395G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1050 C0G

SRAF1050 C0G

DIODE SCHOTTKY 50V 10A ITO220AC

Taiwan Semiconductor Corporation
3,121 -

RFQ

SRAF1050 C0G

データシート

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N5395GHA0G

1N5395GHA0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,652 -

RFQ

1N5395GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HER154G R0G

HER154G R0G

DIODE GEN PURP 300V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,582 -

RFQ

HER154G R0G

データシート

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
S3G V6G

S3G V6G

DIODE GEN PURP 400V 3A DO214AB

Taiwan Semiconductor Corporation
3,167 -

RFQ

S3G V6G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 400 V 400 V 3A -55°C ~ 150°C -
S3J V6G

S3J V6G

DIODE GEN PURP 600V 3A DO214AB

Taiwan Semiconductor Corporation
3,380 -

RFQ

S3J V6G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 3A -55°C ~ 150°C -
S3K V6G

S3K V6G

DIODE GEN PURP 800V 3A DO214AB

Taiwan Semiconductor Corporation
3,155 -

RFQ

S3K V6G

データシート

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 3A -55°C ~ 150°C -
SRAF1050HC0G

SRAF1050HC0G

DIODE SCHOTTKY 50V 10A ITO220AC

Taiwan Semiconductor Corporation
3,679 -

RFQ

SRAF1050HC0G

データシート

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N5397G A0G

1N5397G A0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,279 -

RFQ

1N5397G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1060 C0G

SRAF1060 C0G

DIODE SCHOTTKY 60V 10A ITO220AC

Taiwan Semiconductor Corporation
3,130 -

RFQ

SRAF1060 C0G

データシート

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N5397GHA0G

1N5397GHA0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,747 -

RFQ

1N5397GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1060HC0G

SRAF1060HC0G

DIODE SCHOTTKY 60V 10A ITO220AC

Taiwan Semiconductor Corporation
3,576 -

RFQ

SRAF1060HC0G

データシート

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 10A -55°C ~ 150°C 700 mV @ 10 A
1N5398G A0G

1N5398G A0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation
3,799 -

RFQ

1N5398G A0G

データシート

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1090 C0G

SRAF1090 C0G

DIODE SCHOTTKY 90V 10A ITO220AC

Taiwan Semiconductor Corporation
3,728 -

RFQ

SRAF1090 C0G

データシート

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -55°C ~ 150°C 850 mV @ 10 A
1N5398GHA0G

1N5398GHA0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation
2,878 -

RFQ

1N5398GHA0G

データシート

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SRAF1090HC0G

SRAF1090HC0G

DIODE SCHOTTKY 90V 10A ITO220AC

Taiwan Semiconductor Corporation
3,615 -

RFQ

SRAF1090HC0G

データシート

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -55°C ~ 150°C 850 mV @ 10 A
SRAF16100 C0G

SRAF16100 C0G

DIODE SCHOTTKY 100V 16A ITO220AC

Taiwan Semiconductor Corporation
2,614 -

RFQ

SRAF16100 C0G

データシート

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 16A -55°C ~ 150°C 920 mV @ 16 A
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1500+
1500+ 日平均RFQ
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20,000.000 標準製品ユニット
1800+
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15,000+
15,000+ 在庫倉庫
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