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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N486B1N486B - RECTIFIER DIODE, 0.2A, Rochester Electronics, LLC |
30,000 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 50 nA @ 225 V | 250 V | 200mA | 175°C | 1 V @ 100 mA | |
|
STPS20M60SG-TRDIODE SCHOTTKY 60V 20A D2PAK STMicroelectronics |
3,148 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 125 µA @ 60 V | 60 V | 20A | 150°C (Max) | 565 mV @ 20 A | |
|
|
1N4591N459 - HIGH CONDUCTANCE LOW LEA Rochester Electronics, LLC |
30,000 | - |
RFQ |
データシート |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 6pF @ 0V, 1MHz | - | 25 nA @ 175 V | 200 V | 500mA | 175°C (Max) | 1 V @ 100 mA | |
|
VS-20ETF12SLHM3DIODES - D2PAK-E3 Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A |
|
|
BAV21-T50RBAV21 - HIGH VOLTAGE GENERAL PUR Rochester Electronics, LLC |
30,000 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA | 175°C (Max) | 1.25 V @ 200 mA | |
|
VS-8EWF12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,532 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 100 µA @ 1200 V | 1200 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A | |
|
1N4148TRHIGH CONDUCTANCE FAST DIODE Rochester Electronics, LLC |
26,500 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -65°C ~ 175°C | 1 V @ 10 mA | |
|
|
STTH30L06GY-TRDIODE GEN PURP 600V 30A D2PAK STMicroelectronics |
2,273 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 90 ns | 25 µA @ 600 V | 600 V | 30A | -40°C ~ 175°C | 1.55 V @ 30 A |
|
FDH300ATRRECTIFIER DIODE, 0.2A, 125V, DO- Rochester Electronics, LLC |
25,000 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 6pF @ 0V, 1MHz | - | 1 nA @ 125 V | 125 V | 200mA | 175°C (Max) | 1 V @ 200 mA | |
|
STPSC10H065GY-TRDIODE SCHTY SIC 650V 10A D2PAK STMicroelectronics |
3,768 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 480pF @ 0V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A |
|
BAW56WT1GBAW56 - HIGH-SPEED SWITCHING DIO Rochester Electronics, LLC |
21,000 | - |
RFQ |
データシート |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JAN1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
2,906 | - |
RFQ |
データシート |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
VS-20ETS12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
DSS10-01AS-TUBDIODE SCHOTTKY 100V 10A TO263AB IXYS |
3,695 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 840 mV @ 10 A | |
|
|
1N5282TR1N5282 - RECTIFIER DIODE, 0.2A, Rochester Electronics, LLC |
20,000 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 55 V | 80 V | 200mA | 175°C (Max) | 900 mV @ 100 mA | |
|
TSPB5H120S S1GDIODE SCHOTTKY 120V 5A SMPC4.0 Taiwan Semiconductor Corporation |
3,833 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 120 V | 120 V | 5A | -55°C ~ 150°C | 740 mV @ 5 A | |
|
MBRB4030T4GDIODE SCHOTTKY 30V 40A D2PAK onsemi |
16,967 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 350 µA @ 30 V | 30 V | 40A | -65°C ~ 175°C | 550 mV @ 40 A |
|
1N4938UR-1DIODE GEN PURP 175V 100MA DO213 Microchip Technology |
3,759 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 50 ns | 100 nA @ 175 V | 175 V | 100mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
PMEG3002ESFYLNOW NEXPERIA PMEG3002ESF - 30 V, Rochester Electronics, LLC |
18,000 | - |
RFQ |
データシート |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 21pF @ 1V, 1MHz | 1.42 ns | 9 µA @ 30 V | 30 V | 200mA | 150°C (Max) | 535 mV @ 200 mA | |
|
SE20DG-M3/IDIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,490 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 400 V | 400 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
- 1500+ 日平均RFQ
- 20,000.000 標準製品ユニット
- 1800+ 世界中のメーカー
- 15,000+ 在庫倉庫
