写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPG20N06S2L-35AATMA1N-CHANNEL POWER MOSFET Infineon Technologies |
2,218 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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BUK7E8R3-40E12775A, 40V, 0.0074OHM, N CHANNEL Nexperia USA Inc. |
2,581 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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FDD6N50RTF6A, 500V, N-CHANNEL, MOSFET Fairchild Semiconductor |
2,254 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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FDMC8298N-CHANNEL POWER TRENCH MOSFET Fairchild Semiconductor |
3,525 | - |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | |
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FDD9407N CHANNEL POWER TRENCH MOSFET Fairchild Semiconductor |
2,862 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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IRF120CECCPFET, 9.2A I(D), 100V, 0.27OHM International Rectifier |
3,736 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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FQT1N60CTFMOSFET N-CH 600V 0.2A SOT-223-4 Fairchild Semiconductor |
2,094 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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RFP40N10S500140A, 100V, 0.04OHM, N CHANNEL, M Harris Corporation |
3,261 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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SP8M31HZGTB60V DUAL NCH+PCH AUTOMOTIVE POWE Rohm Semiconductor |
2,211 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Standard | 60V | 4.5A (Ta) | 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V | 3V @ 1mA | 7nC @ 5V, 40nC @ 10V | 500pF @ 10V, 2500pF @ 10V | 2W (Ta) | 150°C (TJ) | Surface Mount |
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EPC2110ENGRTGAN TRANS 2N-CH 120V BUMPED DIE EPC |
2,023 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount |
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SCH1306-TL-EP-CHANNEL SILICON MOSFET Sanyo |
2,332 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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MCH3360-TL-EP-CHANNEL SILICON MOSFET Sanyo |
3,590 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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IRF540RP228A, 100V, 0.077 OHM, N-CHANNEL Harris Corporation |
2,956 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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FDN5632NN CHANNEL LOGIC LEVEL POWERTRENC Fairchild Semiconductor |
2,010 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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BUK762R0-40CPFET, 276A I(D), 40V, 0.00375OHM Nexperia USA Inc. |
3,181 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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ISL85402IRZ-TT7AISL85402 - 2.5A REGULATOR WITH I Renesas Electronics America Inc |
3,876 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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HAF1002-90L15A, 60V, P-CHANNEL MOSFET Renesas Electronics America Inc |
3,837 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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FDS9431P CHANNEL 2.5V SPECIFIED MOSFET Fairchild Semiconductor |
3,558 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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FDP2710_SN001681-ELEMENT, N-CHANNEL Fairchild Semiconductor |
2,277 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
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NVD6828NLT4G8A, 90V, 0.031OHM, N-CHANNEL, M onsemi |
2,710 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |