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トランジスタ - FET、MOSFET - アレイ
| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SLA5068 LF853MOSFET 6N-CH 60V 7A 15-SIP Sanken |
3,815 | - |
RFQ |
データシート |
Tube | - | Active | 6 N-Channel (3-Phase Bridge) | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 5W | 150°C (TJ) | Through Hole |
|
CAB006A12GM31200V 2B HALF-BRIDGE,ALN Wolfspeed, Inc. |
2,469 | - |
RFQ |
データシート |
Tray | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 200A (Tj) | 6.9mOhm @ 200A, 15V | 3.6V @ 69mA | 708nC @ 15V | 20400pF @ 800V | 10mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTC60TAM24TPGMOSFET 6N-CH 600V 95A SP6-P Microchip Technology |
2,897 | - |
RFQ |
データシート |
Tray | CoolMOS™ | Active | 6 N-Channel (3-Phase Bridge) | Super Junction | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTM50AM24SCGMOSFET 2N-CH 500V 150A SP6 Microchip Technology |
3,077 | - |
RFQ |
データシート |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 150A | 28mOhm @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | 19600pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTM10HM05FGMOSFET 4N-CH 100V 278A SP6 Microchip Technology |
2,697 | - |
RFQ |
データシート |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 100V | 278A | 5mOhm @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | 780W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
2N7002KDWN-CH MOSFET 60V 0.34A SOT-363 Yangzhou Yangjie Electronic Technology Co.,Ltd |
2,253 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 60V | 340mA (Ta) | 2.5Ohm @ 300mA, 10V | 2.5V @ 250µA | 2.4nC @ 10V | 30pF @ 30V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
YJQ3400AN-CH MOSFET 30V 7.7A DFN2020-6L- Yangzhou Yangjie Electronic Technology Co.,Ltd |
3,173 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | - | 30V | 7.7A (Ta) | 23mOhm @ 7.7A, 10V | 1.5V @ 250µA | 17.25nC @ 10V | 630pF @ 15V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMDPB95XNE2XNEXPERIA PMDPB95XNE2 - 30 V, DUA NXP Semiconductors |
3,108 | - |
RFQ |
データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
G4616N+P/-40V,RD(MAX)<20M@10V,RD(MAX) Goford Semiconductor |
2,018 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel Complementary | Standard | 40V | 8A (Tc), 7A (Tc) | 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V | 2.5V @ 250µA | 12nC @ 10V, 13nC @ 10V | 415pF @ 20V, 520pF @ 20V | 2W (Tc), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G05NP06S2NP60V, 5A/-3.1A,RD<36M/80M@10V/- Goford Semiconductor |
3,783 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | - | 60V | 5A (Tc), 3.1A (Tc) | 40mOhm @ 3.9A, 5V, 95mOhm @ 200mA, 4.5V | 2V @ 250µA, 2.2V @ 250µA | 22nC @ 10V, 37nC @ 10V | 1336pF @ 30V, 1454pF @ 30V | 2.5W (Tc), 1.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ALD110808APCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
2,767 | - |
RFQ |
データシート |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110808ASCLMOSFET 4N-CH 10.6V 16SOIC Advanced Linear Devices Inc. |
3,782 | - |
RFQ |
データシート |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
TC8020K6-G-M937MOSFET 6N/6P-CH 200V 56VQFN Microchip Technology |
2,609 | - |
RFQ |
データシート |
Tape & Reel (TR) | - | Active | 6 N and 6 P-Channel | Standard | 200V | - | 8Ohm @ 1A, 10V | 2.4V @ 1mA | - | 50pF @ 25V | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
ALD310702APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
3,700 | - |
RFQ |
データシート |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310704APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,671 | - |
RFQ |
データシート |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
|
ALD310708APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
2,255 | - |
RFQ |
データシート |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
SLA5037MOSFET 4N-CH 100V 10A 12SIP Sanken |
3,262 | - |
RFQ |
データシート |
Tube | - | Active | 4 N-Channel | Logic Level Gate | 100V | 10A | 80mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | 5W | 150°C (TJ) | Through Hole |
|
|
SLA5041MOSFET 4N-CH 200V 10A 12SIP Sanken |
3,547 | - |
RFQ |
データシート |
Tube | - | Active | 4 N-Channel | Logic Level Gate | 200V | 10A | 175mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 5W | 150°C (TJ) | Through Hole |
|
ALD1101APALMOSFET 2N-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,946 | - |
RFQ |
データシート |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1102APALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,091 | - |
RFQ |
データシート |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
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