トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF9N50C

FQPF9N50C

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
421,208 -

RFQ

FQPF9N50C

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) - 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R1K0C3

IPI90R1K0C3

N-CHANNEL POWER MOSFET

Infineon Technologies
11,990 -

RFQ

IPI90R1K0C3

データシート

Bulk * Obsolete - - - - - - - - - - - - - -
NP75N04YUG-E1-AY

NP75N04YUG-E1-AY

MOSFET N-CH 40V 75A 8HSON

Renesas Electronics America Inc
2,500 -

RFQ

NP75N04YUG-E1-AY

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.8mOhm @ 37.5A, 10V 4V @ 250µA 116 nC @ 10 V ±20V 6450 pF @ 25 V - 1W (Ta), 138W (Tc) 175°C (TJ) Surface Mount
IRF710PBF-BE3

IRF710PBF-BE3

MOSFET N-CH 400V 2A TO220AB

Vishay Siliconix
2,498 -

RFQ

IRF710PBF-BE3

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) - 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
JDX5010

JDX5010

NFET T0220FP JPN

onsemi
27,481 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
N0436N-ZK-E1-AY

N0436N-ZK-E1-AY

ABU / MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

N0436N-ZK-E1-AY

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Ta) 10V 4.7mOhm @ 28A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 3200 pF @ 25 V - 1W (Ta), 87.4W (Tc) 150°C Surface Mount
RFD16N05

RFD16N05

MOSFET N-CH 50V 16A IPAK

Harris Corporation
2,800 -

RFQ

RFD16N05

データシート

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM070NH04CR RLG

TSM070NH04CR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation
5,000 -

RFQ

TSM070NH04CR RLG

データシート

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 54A (Tc) 7V, 10V 7mOhm @ 27A, 10V 3.6V @ 250µA 19 nC @ 10 V ±20V 1337 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD26AN06A0

FDD26AN06A0

MOSFET N-CH 60V 7A/36A TO252AA

Fairchild Semiconductor
42,639 -

RFQ

FDD26AN06A0

データシート

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 36A (Tc) 10V 26mOhm @ 36A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75939P3

HUF75939P3

MOSFET N-CH 200V 22A TO220-3

Fairchild Semiconductor
35,157 -

RFQ

HUF75939P3

データシート

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 22A (Tc) 10V 125mOhm @ 22A, 10V 4V @ 250µA 152 nC @ 20 V ±20V 2200 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
EPC2016C

EPC2016C

GANFET N-CH 100V 18A DIE

EPC
179,867 -

RFQ

EPC2016C

データシート

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 18A (Ta) 5V 16mOhm @ 11A, 5V 2.5V @ 3mA 4.5 nC @ 5 V +6V, -4V 420 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
UPA2718GR-E2-AT

UPA2718GR-E2-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
19,780 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2708GR-E1-A

UPA2708GR-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
17,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP6N80

FQP6N80

MOSFET N-CH 800V 5.8A TO220-3

Fairchild Semiconductor
12,522 -

RFQ

FQP6N80

データシート

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.8A (Tc) 10V 1.95Ohm @ 2.9A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 158W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS7766

FDS7766

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
11,245 -

RFQ

FDS7766

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 5mOhm @ 17A, 10V 3V @ 250µA 69 nC @ 5 V ±16V 4973 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI60R385CP

IPI60R385CP

N-CHANNEL POWER MOSFET

Infineon Technologies
78,346 -

RFQ

IPI60R385CP

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75344S3ST

HUFA75344S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor
29,555 -

RFQ

HUFA75344S3ST

データシート

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6682

FDD6682

MOSFET N-CH 30V 75A DPAK

Fairchild Semiconductor
29,080 -

RFQ

FDD6682

データシート

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 71W (Ta) -55°C ~ 175°C (TJ) Surface Mount
SIR510DP-T1-RE3

SIR510DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
5,994 -

RFQ

SIR510DP-T1-RE3

データシート

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Ta), 126A (Tc) 7.5V, 10V 3.6mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 4980 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76139P3

HUF76139P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
12,841 -

RFQ

HUF76139P3

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 2700 pF @ 25 V - 165W (Tc) -40°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
日文版

ホーム

日文版

製品

日文版

電話

日文版

ユーザー