写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM056NH04LCV RGG40V, 54A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
5,000 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | PerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 54A (Tc) | 4.5V, 10V | 5.6mOhm @ 27A, 10V | 2.2V @ 250µA | 33 nC @ 10 V | ±16V | 2076 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDD6680AMOSFET N-CH 30V 14A/56A DPAK Fairchild Semiconductor |
209,395 | - |
RFQ |
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Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 14A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1425 pF @ 15 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDD6680MOSFET N-CH 30V 12A/46A DPAK Fairchild Semiconductor |
199,496 | - |
RFQ |
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Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 46A (Tc) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 18 nC @ 5 V | ±20V | 1230 pF @ 15 V | - | 3.3W (Ta), 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDD6680SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
31,202 | - |
RFQ |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Ta) | 4.5V, 10V | 11mOhm @ 12.5A, 10V | 3V @ 1mA | 24 nC @ 5 V | ±20V | 2010 pF @ 15 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDS7088SN3MOSFET N-CH 30V 21A 8SO Fairchild Semiconductor |
10,386 | - |
RFQ |
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Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 4mOhm @ 21A, 10V | 3V @ 1mA | 80 nC @ 10 V | ±20V | 3230 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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RS6G120BGTB1NCH 40V 210A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,500 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 4.5V, 10V | 1.34mOhm @ 90A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 4240 pF @ 20 V | - | 104W (Ta) | 150°C (TJ) | Surface Mount |
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FQPF32N12V2MOSFET N-CH 120V 32A TO220F Fairchild Semiconductor |
83,103 | - |
RFQ |
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Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RJK6026DPP-E0#T2MOSFET N-CH 600V 5A TO220FP Renesas Electronics America Inc |
40,100 | - |
RFQ |
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Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Ta) | - | 2.4Ohm @ 2.5A, 10V | - | 14 nC @ 10 V | - | 440 pF @ 25 V | - | 28.5W (Tc) | 150°C (TJ) | Through Hole |
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FDS8449-F085MOSFET N-CH 40V 7.6A 8SOIC onsemi |
3,265 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 7.6A (Ta) | 4.5V, 10V | 29mOhm @ 7.6A, 10V | 3V @ 250µA | 11 nC @ 10 V | ±20V | 760 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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TK5A55D(STA4,Q,M)MOSFET N-CH 550V 5A TO220SIS Toshiba Semiconductor and Storage |
3,894 | - |
RFQ |
![]() データシート |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 5A (Ta) | 10V | 1.7Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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DMT10H9M9SCTMOSFET BVDSS: 61V~100V TO220AB T Diodes Incorporated |
2,691 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 99A (Tc) | 6V, 10V | 8.8mOhm @ 20A, 10V | 3.9V @ 250µA | 30 nC @ 10 V | ±20V | 2085 pF @ 50 V | - | 2.3W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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DMT10H9M9LCTMOSFET BVDSS: 61V~100V TO220AB T Diodes Incorporated |
3,775 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 101A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 2.5V @ 250µA | 40.2 nC @ 10 V | ±20V | 2309 pF @ 50 V | - | 2.3W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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DMTH4002SCTBQ-13MOSFET BVDSS: 31V~40V TO263 T&R Diodes Incorporated |
2,800 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 192A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 77.5 nC @ 10 V | ±20V | 7180 pF @ 20 V | - | 6W (Ta), 166.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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N0439N-S19-AYMOSFET N-CH 40V 90A TO220 Renesas Electronics America Inc |
2,675 | - |
RFQ |
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Tape & Reel (TR) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.3mOhm @ 45A, 10V | 4V @ 250µA | 102 nC @ 10 V | ±20V | 5850 pF @ 25 V | - | 1.8W (Ta), 147W (Tc) | 175°C (TJ) | Through Hole |
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NVMYS003N08LHTWGT8 80V LL LFPAK onsemi |
2,976 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 132A (Tc) | 4.5V, 10V | 3.3mOhm @ 50A, 10V | 2V @ 183µA | 64 nC @ 10 V | ±20V | 3735 pF @ 40 V | - | 3.8W (Ta), 137W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRF7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC Infineon Technologies |
2,856 | - |
RFQ |
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Tape & Reel (TR) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMFS6H801NLT1GMOSFET N-CH 80V 24A/160A 5DFN onsemi |
3,353 | - |
RFQ |
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Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Ta), 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 250µA | 90 nC @ 10 V | ±20V | 5126 pF @ 40 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRFR2905ZTRLMOSFET N-CH 55V 42A DPAK Infineon Technologies |
2,195 | - |
RFQ |
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Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1380 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSF134N10NJ3GXUMA1MOSFET N-CH 100V 9A/40A 2WDSON Infineon Technologies |
2,918 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IPA126N10NM3SXKSA1MOSFET N-CH 100V 39A TO220 Infineon Technologies |
2,003 | - |
RFQ |
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Tube | OptiMOS™3 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Tc) | 6V, 10V | 12.6mOhm @ 39A, 10V | 3.5V @ 46µA | 35 nC @ 10 V | ±20V | 2500 pF @ 50 V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |