トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFL1N15L

RFL1N15L

N-CHANNEL POWER MOSFET

Harris Corporation
1,621 -

RFQ

RFL1N15L

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 5V 1.9Ohm @ 1A, 5V 2V @ 250µA - ±10V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU4510PBF

IRFU4510PBF

MOSFET N-CH 100V 56A IPAK

Infineon Technologies
2,955 -

RFQ

IRFU4510PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK03C0DPA-00#J53

RJK03C0DPA-00#J53

MOSFET N-CH 30V 70A 8WPAK

Renesas Electronics America Inc
463,509 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Ta) - 2mOhm @ 35A, 10V 2.5V @ 1mA 66 nC @ 4.5 V - 11000 pF @ 10 V - 65W (Tc) - Surface Mount
FQA10N80

FQA10N80

MOSFET N-CH 800V 9.8A TO3P

Fairchild Semiconductor
58,266 -

RFQ

FQA10N80

データシート

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 9.8A (Tc) 10V 1.05Ohm @ 4.9A, 10V 5V @ 250µA 71 nC @ 10 V ±30V 2700 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT2172N-EL-E

HAT2172N-EL-E

MOSFET N-CH 40V 30A 8LFPAK

Renesas Electronics America Inc
27,200 -

RFQ

HAT2172N-EL-E

データシート

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta) - 7.8mOhm @ 15A, 10V - 32 nC @ 10 V - 2420 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
PJMP990N65EC_T0_00001

PJMP990N65EC_T0_00001

650V SUPER JUNCITON MOSFET

Panjit International Inc.
4,000 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 306 pF @ 400 V - 47.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3221-AZ

2SK3221-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
17,154 -

RFQ

2SK3221-AZ

データシート

Bulk * Active - - - - - - - - - - - - - -
FS30KMJ-06F#B00

FS30KMJ-06F#B00

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
15,624 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1286-AZ

2SK1286-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
14,033 -

RFQ

2SK1286-AZ

データシート

Bulk * Active - - - - - - - - - - - - - -
PJMP900N60EC_T0_00001

PJMP900N60EC_T0_00001

600V SUPER JUNCITON MOSFET

Panjit International Inc.
1,998 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.3A, 10V 4V @ 250µA 8.8 nC @ 10 V ±30V 310 pF @ 400 V - 47.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF1405-INF

AUIRF1405-INF

AUTOMOTIVE HEXFET N CHANNEL

Infineon Technologies
22,100 -

RFQ

AUIRF1405-INF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6572A

FDS6572A

MOSFET N-CH 20V 16A 8SOIC

Fairchild Semiconductor
374,417 -

RFQ

FDS6572A

データシート

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.5V, 4.5V 6mOhm @ 16A, 4.5V 1.5V @ 250µA 80 nC @ 4.5 V ±12V 5914 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDB7030BLS

FDB7030BLS

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
34,400 -

RFQ

FDB7030BLS

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 9mOhm @ 30A, 10V 3V @ 250µA 24 nC @ 5 V ±20V 1760 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) Surface Mount
TK110U65Z,RQ

TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

Toshiba Semiconductor and Storage
3,820 -

RFQ

TK110U65Z,RQ

データシート

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Surface Mount
SPW11N60S5

SPW11N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
15,052 -

RFQ

SPW11N60S5

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK2A65D(STA4,Q,M)

TK2A65D(STA4,Q,M)

MOSFET N-CH 650V 2A TO220SIS

Toshiba Semiconductor and Storage
3,118 -

RFQ

TK2A65D(STA4,Q,M)

データシート

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Ta) 10V 3.26Ohm @ 1A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
IPB70P04P409ATMA1

IPB70P04P409ATMA1

MOSFET N-CH 40V 72A D2PAK

Infineon Technologies
3,803 -

RFQ

IPB70P04P409ATMA1

データシート

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.1mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB050N10NF2SATMA1

IPB050N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
3,661 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
NVD260N65S3T4G

NVD260N65S3T4G

SF3 EASY AUTO 260MOHM DPAK

onsemi
2,897 -

RFQ

NVD260N65S3T4G

データシート

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 23.5 nC @ 10 V ±30V 1042 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOT5N100

AOT5N100

MOSFET N-CH 1000V 4A TO220

Alpha & Omega Semiconductor Inc.
3,503 -

RFQ

AOT5N100

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 4.2Ohm @ 2.5A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 1150 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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