トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL630STRLPBF

IRL630STRLPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,751 -

RFQ

IRL630STRLPBF

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK8Q65W,S1Q

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage
2,947 -

RFQ

TK8Q65W,S1Q

データシート

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
NTMYS4D5N04CTWG

NTMYS4D5N04CTWG

MOSFET N-CH 40V 20A/80A 4LFPAK

onsemi
3,803 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 80A (Tc) 10V 4.5mOhm @ 35A, 10V 3.5V @ 50µA 18 nC @ 10 V 20V 1150 pF @ 25 V - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC100N10S5L040ATMA1

IAUC100N10S5L040ATMA1

MOSFET N-CH 100V 100A 8TDSON-34

Infineon Technologies
2,761 -

RFQ

Tape & Reel (TR) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 90µA 78 nC @ 10 V ±20V 5200 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK11A45D(STA4,Q,M)

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage
2,396 -

RFQ

TK11A45D(STA4,Q,M)

データシート

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IRFIBF20GPBF

IRFIBF20GPBF

MOSFET N-CH 900V 1.2A TO220-3

Vishay Siliconix
3,697 -

RFQ

IRFIBF20GPBF

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.2A (Tc) 10V 8Ohm @ 720mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK12Q60W,S1VQ

TK12Q60W,S1VQ

MOSFET N CH 600V 11.5A IPAK

Toshiba Semiconductor and Storage
3,297 -

RFQ

TK12Q60W,S1VQ

データシート

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TK10V60W,LVQ

TK10V60W,LVQ

MOSFET N-CH 600V 9.7A 4DFN

Toshiba Semiconductor and Storage
3,395 -

RFQ

TK10V60W,LVQ

データシート

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 88.3W (Tc) 150°C (TJ) Surface Mount
AOB11S65L

AOB11S65L

MOSFET N-CH 650V 11A TO263

Alpha & Omega Semiconductor Inc.
3,084 -

RFQ

AOB11S65L

データシート

Tape & Reel (TR),Cut Tape (CT) aMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 399mOhm @ 5.5A, 10V 4V @ 250µA 13.2 nC @ 10 V ±30V 646 pF @ 100 V - 198W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMYS3D8N04CLTWG

NTMYS3D8N04CLTWG

MOSFET N-CH 40V 22A/87A 4LFPAK

onsemi
3,233 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2V @ 50µA 18 nC @ 10 V 20V 1600 pF @ 25 V - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP5N60M2

STP5N60M2

MOSFET N-CH 600V 3.7A TO220

STMicroelectronics
3,712 -

RFQ

STP5N60M2

データシート

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Tc) 10V 1.4Ohm @ 1.85A, 10V 4V @ 250µA 4.5 nC @ 10 V ±25V 165 pF @ 100 V - 45W (Tc) 150°C (TJ) Through Hole
NP36P06SLG-E1-AY

NP36P06SLG-E1-AY

MOSFET P-CH 60V 36A TO252

Renesas Electronics America Inc
2,913 -

RFQ

NP36P06SLG-E1-AY

データシート

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 30mOhm @ 18A, 10V - 52 nC @ 10 V ±20V 3200 pF @ 10 V - 1.2W (Ta), 56W (Tc) 175°C (TJ) Surface Mount
TK16G60W5,RVQ

TK16G60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
2,867 -

RFQ

TK16G60W5,RVQ

データシート

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Surface Mount
NVMFS5C426NWFET1G

NVMFS5C426NWFET1G

T6-40V N 1.3 MOHMS SL

onsemi
3,596 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPI47N10S33AKSA1

IPI47N10S33AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies
3,379 -

RFQ

IPI47N10S33AKSA1

データシート

Tube SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 33mOhm @ 33A, 10V 4V @ 2mA 105 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI47N10SL26AKSA1

IPI47N10SL26AKSA1

MOSFET N-CH 100V 47A TO262-3

Infineon Technologies
2,107 -

RFQ

IPI47N10SL26AKSA1

データシート

Tube SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN030-150P,127

PSMN030-150P,127

MOSFET N-CH 150V 55.5A TO220AB

Nexperia USA Inc.
2,399 -

RFQ

PSMN030-150P,127

データシート

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 55.5A (Tc) 10V 30mOhm @ 25A, 10V 4V @ 1mA 98 nC @ 10 V ±20V 3680 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP25N60EFL-BE3

SIHP25N60EFL-BE3

N-CHANNEL 600V

Vishay Siliconix
978 -

RFQ

SIHP25N60EFL-BE3

データシート

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60AE-BE3

SIHP22N60AE-BE3

N-CHANNEL 600V

Vishay Siliconix
2,000 -

RFQ

SIHP22N60AE-BE3

データシート

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA037N08N3GXKSA1

IPA037N08N3GXKSA1

MOSFET N-CH 80V 75A TO220-FP

Infineon Technologies
500 -

RFQ

IPA037N08N3GXKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 6V, 10V 3.7mOhm @ 75A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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