トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHS36N50D-GE3

SIHS36N50D-GE3

D SERIES POWER MOSFET SUPER-247

Vishay Siliconix
3,057 -

RFQ

SIHS36N50D-GE3

データシート

Tube D Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 18A, 10V 5V @ 250µA 125 nC @ 10 V ±30V 3233 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ)
RJK1525DPP-MG#T2

RJK1525DPP-MG#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,582 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXFP26N50P3

IXFP26N50P3

MOSFET N-CH 500V 26A TO220AB

IXYS
139 -

RFQ

IXFP26N50P3

データシート

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK1536DPE-00#J3

RJK1536DPE-00#J3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
88,000 -

RFQ

RJK1536DPE-00#J3

データシート

Bulk * Active - - - - - - - - - - - - - -
RFG75N05E

RFG75N05E

N-CHANNEL POWER MOSFET

Harris Corporation
18,695 -

RFQ

RFG75N05E

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 400 nC @ 20 V ±20V - - 240W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH30N50P

IXFH30N50P

MOSFET N-CH 500V 30A TO247AD

IXYS
187 -

RFQ

IXFH30N50P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3SC065040B7S

UF3SC065040B7S

650V/40MOHM, SIC, STACKED FAST C

UnitedSiC
3,190 -

RFQ

UF3SC065040B7S

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 43A (Tc) 12V 52mOhm @ 30A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE2383

NTE2383

MOSFET P-CH 100V 10.5A TO220

NTE Electronics, Inc
104 -

RFQ

NTE2383

データシート

Bag - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 835 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R057M1HXTMA1

IMBG65R057M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
1,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
IXFH46N65X3

IXFH46N65X3

MOSFET 46A 650V X3 TO247

IXYS
550 -

RFQ

IXFH46N65X3

データシート

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 73mOhm @ 23A, 10V 5.2V @ 2.5mA 40 nC @ 10 V ±20V 2730 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA160N08

FQA160N08

MOSFET N-CH 80V 160A TO3PN

onsemi
252 -

RFQ

FQA160N08

データシート

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 290 nC @ 10 V ±25V 7900 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R060CFD7XKSA1

IPP65R060CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
980 -

RFQ

IPP65R060CFD7XKSA1

データシート

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6547ENZ4C13

R6547ENZ4C13

650V 47A TO-247, LOW-NOISE POWER

Rohm Semiconductor
509 -

RFQ

R6547ENZ4C13

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 80mOhm @ 25.8A, 10V 4V @ 1.72mA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 480W (Tc) 150°C (TJ) Through Hole
TW107N65C,S1F

TW107N65C,S1F

G3 650V SIC-MOSFET TO-247 107MO

Toshiba Semiconductor and Storage
125 -

RFQ

TW107N65C,S1F

データシート

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 20A (Tc) 18V 145mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C Through Hole
IMBG120R090M1HXTMA1

IMBG120R090M1HXTMA1

SICFET N-CH 1.2KV 26A TO263

Infineon Technologies
1,861 -

RFQ

IMBG120R090M1HXTMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) - 125mOhm @ 8.5A, 18V 5.7V @ 3.7mA 23 nC @ 18 V +18V, -15V 763 pF @ 800 V Standard 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP27N60KPBF

IRFP27N60KPBF

MOSFET N-CH 600V 27A TO247-3

Vishay Siliconix
5,085 -

RFQ

IRFP27N60KPBF

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 220mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 4660 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH48N60X3

IXFH48N60X3

MOSFET ULTRA JCT 600V 48A TO247

IXYS
253 -

RFQ

IXFH48N60X3

データシート

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 65mOhm @ 24A, 10V 5V @ 2.5mA 38 nC @ 10 V ±20V 2730 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2375

NTE2375

MOSFET N-CHANNEL 100V 41A TO247

NTE Electronics, Inc
216 -

RFQ

NTE2375

データシート

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP60N20X4

IXTP60N20X4

MOSFET ULTRA X4 200V 60A TO-220

IXYS
380 -

RFQ

IXTP60N20X4

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6792TX

2N6792TX

2A, 400V, 1.8OHM, N-CHANNEL

Harris Corporation
335 -

RFQ

2N6792TX

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 1.8Ohm @ 1.25A, 10V 4V @ 1mA - ±20V 600 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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