写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPA60R299CPXKSA1MOSFET N-CH 600V 11A TO220-FP Infineon Technologies |
2,965 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
SK830321KLMOSFET N-CH 30V 7A/18A 8HSSO Panasonic Electronic Components |
4,981 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 24mOhm @ 4.5A, 10V | 3V @ 519µA | 3.9 nC @ 4.5 V | ±20V | 658 pF @ 10 V | - | 2W (Ta), 13W (Tc) | 150°C (TJ) | Surface Mount |
![]() |
IRF6641TRPBFMOSFET N-CH 200V 4.6A DIRECTFET Infineon Technologies |
4,800 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48 nC @ 10 V | ±20V | 2290 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
RF6E065BNTCRMOSFET N-CH 30V 6.5A TUMT6 Rohm Semiconductor |
2,990 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 15.3mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16.3 nC @ 10 V | ±20V | 680 pF @ 15 V | - | 910mW (Ta) | 150°C (TJ) | Surface Mount |
![]() |
SIHB22N60E-E3MOSFET N-CH 600V 21A D2PAK Vishay Siliconix |
2,415 | - |
RFQ |
![]() データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IPB65R230CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies |
3,181 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
TSM60NB380CH C5GMOSFET N-CH 600V 9.5A TO251 Taiwan Semiconductor Corporation |
2,657 | - |
RFQ |
![]() データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 380mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 795 pF @ 100 V | - | 83W (Tc) | -50°C ~ 150°C (TJ) | Through Hole |
|
STP26N65DM2MOSFET N-CH 650V 20A TO220 STMicroelectronics |
3,742 | - |
RFQ |
![]() データシート |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 35.5 nC @ 10 V | ±25V | 1480 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI076N12N3GAKSA1MOSFET N-CH 120V 100A TO262-3 Infineon Technologies |
2,738 | - |
RFQ |
![]() データシート |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101 nC @ 10 V | ±20V | 6640 pF @ 60 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
2SK2420MOSFET N-CH 60V 30A TO220F Sanken |
2,465 | - |
RFQ |
![]() データシート |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Ta) | 10V | 28mOhm @ 15A, 10V | 4V @ 250µA | - | ±20V | 2200 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
|
SKP202VRMOSFET N-CH 200V 45A TO263-3 Sanken |
2,111 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 45A (Ta) | 10V | 53mOhm @ 20A, 10V | 4.5V @ 1mA | - | ±30V | 2000 pF @ 25 V | - | 95W (Tc) | 150°C (TJ) | Surface Mount |
![]() |
TK10Q60W,S1VQMOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage |
3,159 | - |
RFQ |
![]() データシート |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | Through Hole |
![]() |
SI7880ADP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
3,461 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 125 nC @ 10 V | ±20V | 5600 pF @ 15 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
SIHP22N60EL-GE3MOSFET N-CH 600V 21A TO220AB Vishay Siliconix |
3,828 | - |
RFQ |
![]() データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 1690 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
TK25V60X,LQMOSFET N-CH 600V 25A 4DFN Toshiba Semiconductor and Storage |
2,757 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 135mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C | Surface Mount |
![]() |
NVMFS5C410NWFAFT3GMOSFET N-CH 40V 46A/300A 5DFN onsemi |
2,300 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
R6020FNJTLMOSFET N-CH 600V 20A LPT Rohm Semiconductor |
960 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
SI3442BDV-T1-BE3N-CHANNEL 2.5-V (G-S) MOSFET Vishay Siliconix |
2,790 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 57mOhm @ 4A, 4.5V | 1.8V @ 250µA | 5 nC @ 4.5 V | ±12V | 295 pF @ 10 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
US5U3TRMOSFET N-CH 30V 1.5A TUMT5 Rohm Semiconductor |
2,739 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 2.5V, 4.5V | 240mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2 nC @ 4.5 V | 12V | 80 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | 150°C (TJ) | Surface Mount |
![]() |
PMCM6501VPEZMOSFET P-CH 12V 6.2A 6WLCSP Nexperia USA Inc. |
1,206 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4 nC @ 4.5 V | ±8V | 1400 pF @ 6 V | - | 556mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |