トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RRH040P03TB1

RRH040P03TB1

MOSFET P-CH 30V 4A 8SOP

Rohm Semiconductor
2,290 -

RFQ

RRH040P03TB1

データシート

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 75mOhm @ 4A, 10V 2.5V @ 1mA 5.2 nC @ 5 V ±20V 480 pF @ 10 V - 650mW (Ta) 150°C (TJ) Surface Mount
IPL60R140CFD7AUMA1

IPL60R140CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies
568 -

RFQ

IPL60R140CFD7AUMA1

データシート

Tape & Reel (TR),Bulk - Active - - - 18A (Tc) - - - - - - - - - -
SI4491EDY-T1-GE3

SI4491EDY-T1-GE3

MOSFET P-CH 30V 17.3A 8SO

Vishay Siliconix
1,637 -

RFQ

SI4491EDY-T1-GE3

データシート

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 17.3A (Ta) 4.5V, 10V 6.5mOhm @ 13A, 10V 2.8V @ 250µA 153 nC @ 10 V ±25V 4620 pF @ 15 V - 3.1W (Ta), 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB70N10SL16ATMA1

IPB70N10SL16ATMA1

MOSFET N-CH 100V 70A TO263-3

Infineon Technologies
2,955 -

RFQ

IPB70N10SL16ATMA1

データシート

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RQ7E110AJTCR

RQ7E110AJTCR

MOSFET N-CH 30V 11A TSMT8

Rohm Semiconductor
1,515 -

RFQ

RQ7E110AJTCR

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Tc) 4.5V 9mOhm @ 4.5A, 11V 1.5V @ 10mA 22 nC @ 4.5 V ±12V 2410 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF540NSTRRPBF

IRF540NSTRRPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
1,460 -

RFQ

IRF540NSTRRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM600N25ECH C5G

TSM600N25ECH C5G

MOSFET N-CHANNEL 250V 8A TO251

Taiwan Semiconductor Corporation
1,699 -

RFQ

TSM600N25ECH C5G

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 250µA 8.4 nC @ 10 V ±30V 423 pF @ 25 V - 52W (Tc) 150°C (TJ) Through Hole
FDD4N60NZ

FDD4N60NZ

MOSFET N-CH 600V 3.4A DPAK

onsemi
1,618 -

RFQ

FDD4N60NZ

データシート

Tape & Reel (TR),Cut Tape (CT) UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V 5V @ 250µA 10.8 nC @ 10 V ±25V 510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD2P40TM

FQD2P40TM

MOSFET P-CH 400V 1.56A DPAK

onsemi
1,495 -

RFQ

FQD2P40TM

データシート

Tape & Reel (TR),Cut Tape (CT) QFET® Active P-Channel MOSFET (Metal Oxide) 400 V 1.56A (Tc) 10V 6.5Ohm @ 780mA, 10V 5V @ 250µA 13 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA10N80P-TRL

IXFA10N80P-TRL

MOSFET N-CH 800V 10A TO263

IXYS
2,416 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB7N52K3

STB7N52K3

MOSFET N-CH 525V 6A D2PAK

STMicroelectronics
4,761 -

RFQ

STB7N52K3

データシート

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 525 V 6A (Tc) 10V 980mOhm @ 3.1A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 737 pF @ 100 V - 90W (Tc) 150°C (TJ) Surface Mount
SIHP17N80E-GE3

SIHP17N80E-GE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
3,212 -

RFQ

SIHP17N80E-GE3

データシート

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD2NK60Z-1

STD2NK60Z-1

MOSFET N-CH 600V 1.4A IPAK

STMicroelectronics
3,531 -

RFQ

STD2NK60Z-1

データシート

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 8Ohm @ 700mA, 10V 4.5V @ 50µA 10 nC @ 10 V ±30V 170 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C604NLWFAFT3G

NVMFS5C604NLWFAFT3G

MOSFET N-CH 60V 287A 5DFN

onsemi
2,816 -

RFQ

NVMFS5C604NLWFAFT3G

データシート

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 250µA 52 nC @ 4.5 V ±20V 8900 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK15A50D(STA4,Q,M)

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage
2,441 -

RFQ

TK15A50D(STA4,Q,M)

データシート

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
R6012ANX

R6012ANX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor
3,758 -

RFQ

R6012ANX

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 420mOhm @ 6A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
IPA65R190E6XKSA1

IPA65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies
3,468 -

RFQ

IPA65R190E6XKSA1

データシート

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R190C6XKSA1

IPP65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220-3

Infineon Technologies
476 -

RFQ

IPP65R190C6XKSA1

データシート

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R190C6XKSA1

IPI65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO262-3

Infineon Technologies
2,065 -

RFQ

IPI65R190C6XKSA1

データシート

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP12N65X2M

IXTP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS
3,919 -

RFQ

IXTP12N65X2M

データシート

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 250µA 17.7 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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