写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RRH040P03TB1MOSFET P-CH 30V 4A 8SOP Rohm Semiconductor |
2,290 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 75mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2 nC @ 5 V | ±20V | 480 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount |
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IPL60R140CFD7AUMA1HIGH POWER_NEW Infineon Technologies |
568 | - |
RFQ |
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Tape & Reel (TR),Bulk | - | Active | - | - | - | 18A (Tc) | - | - | - | - | - | - | - | - | - | - |
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SI4491EDY-T1-GE3MOSFET P-CH 30V 17.3A 8SO Vishay Siliconix |
1,637 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 17.3A (Ta) | 4.5V, 10V | 6.5mOhm @ 13A, 10V | 2.8V @ 250µA | 153 nC @ 10 V | ±25V | 4620 pF @ 15 V | - | 3.1W (Ta), 6.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB70N10SL16ATMA1MOSFET N-CH 100V 70A TO263-3 Infineon Technologies |
2,955 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | SIPMOS® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RQ7E110AJTCRMOSFET N-CH 30V 11A TSMT8 Rohm Semiconductor |
1,515 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Tc) | 4.5V | 9mOhm @ 4.5A, 11V | 1.5V @ 10mA | 22 nC @ 4.5 V | ±12V | 2410 pF @ 15 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF540NSTRRPBFMOSFET N-CH 100V 33A D2PAK Infineon Technologies |
1,460 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 1960 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TSM600N25ECH C5GMOSFET N-CHANNEL 250V 8A TO251 Taiwan Semiconductor Corporation |
1,699 | - |
RFQ |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4 nC @ 10 V | ±30V | 423 pF @ 25 V | - | 52W (Tc) | 150°C (TJ) | Through Hole |
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FDD4N60NZMOSFET N-CH 600V 3.4A DPAK onsemi |
1,618 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | UniFET-II™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.4A (Tc) | 10V | 2.5Ohm @ 1.7A, 10V | 5V @ 250µA | 10.8 nC @ 10 V | ±25V | 510 pF @ 25 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FQD2P40TMMOSFET P-CH 400V 1.56A DPAK onsemi |
1,495 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.56A (Tc) | 10V | 6.5Ohm @ 780mA, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXFA10N80P-TRLMOSFET N-CH 800V 10A TO263 IXYS |
2,416 | - |
RFQ |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40 nC @ 10 V | ±30V | 2050 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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STB7N52K3MOSFET N-CH 525V 6A D2PAK STMicroelectronics |
4,761 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SuperMESH3™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 525 V | 6A (Tc) | 10V | 980mOhm @ 3.1A, 10V | 4.5V @ 50µA | 34 nC @ 10 V | ±30V | 737 pF @ 100 V | - | 90W (Tc) | 150°C (TJ) | Surface Mount |
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SIHP17N80E-GE3MOSFET N-CH 800V 15A TO220AB Vishay Siliconix |
3,212 | - |
RFQ |
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Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STD2NK60Z-1MOSFET N-CH 600V 1.4A IPAK STMicroelectronics |
3,531 | - |
RFQ |
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Tube | SuperMESH™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 10 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVMFS5C604NLWFAFT3GMOSFET N-CH 60V 287A 5DFN onsemi |
2,816 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52 nC @ 4.5 V | ±20V | 8900 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TK15A50D(STA4,Q,M)MOSFET N-CH 500V 15A TO220SIS Toshiba Semiconductor and Storage |
2,441 | - |
RFQ |
![]() データシート |
Tube | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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R6012ANXMOSFET N-CH 600V 12A TO220FM Rohm Semiconductor |
3,758 | - |
RFQ |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 1mA | 35 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | Through Hole |
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IPA65R190E6XKSA1MOSFET N-CH 650V 20.2A TO220 Infineon Technologies |
3,468 | - |
RFQ |
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Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220-3 Infineon Technologies |
476 | - |
RFQ |
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Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI65R190C6XKSA1MOSFET N-CH 650V 20.2A TO262-3 Infineon Technologies |
2,065 | - |
RFQ |
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Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTP12N65X2MMOSFET N-CH 650V 12A TO220 IXYS |
3,919 | - |
RFQ |
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Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4.5V @ 250µA | 17.7 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |