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トランジスタ - FET、MOSFET - シングル
| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHP35N60E-GE3MOSFET N-CH 600V 32A TO220AB Vishay Siliconix |
2,082 | - |
RFQ |
データシート |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPC218N06N3X7SA1MV POWER MOS Infineon Technologies |
2,854 | - |
RFQ |
データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STW74NF30MOSFET N-CH 300V 60A TO247 STMicroelectronics |
2,023 | - |
RFQ |
データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
|
IXFA44N25X3MOSFET N-CH 250V 44A TO263 IXYS |
3,551 | - |
RFQ |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 40mOhm @ 22A, 10V | 4.5V @ 1mA | 33 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IXFA50N20X3MOSFET N-CH 200V 50A TO263 IXYS |
3,689 | - |
RFQ |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 30mOhm @ 25A, 10V | 4.5V @ 1mA | 33 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IPP011N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
3,790 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IXFA7N100P-TRLMOSFET N-CH 1000V 7A TO263 IXYS |
3,883 | - |
RFQ |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47 nC @ 10 V | ±30V | 2590 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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|
IPT012N06NATMA1MOSFET N-CH 60V 240A 8HSOF Infineon Technologies |
2,046 | - |
RFQ |
データシート |
Tape & Reel (TR),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 143µA | 124 nC @ 10 V | ±20V | 9750 pF @ 30 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXTP10N60PMOSFET N-CH 600V 10A TO220AB IXYS |
2,581 | - |
RFQ |
データシート |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 250µA | 32 nC @ 10 V | ±30V | 1610 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
NTMFS5C406NT1GT6 40V SG NCH SO8FL HEFET onsemi |
2,767 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | 353A (Tc) | - | - | - | - | - | - | - | - | - | - | |
|
|
IPP100N12S305AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
980 | - |
RFQ |
データシート |
Bulk,Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTP8N70X2MMOSFET N-CH 700V 4A TO220 IXYS |
3,830 | - |
RFQ |
データシート |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 550mOhm @ 500mA, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 800 pF @ 10 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STFU23N80K5MOSFET N-CH 800V 16A TO220FP STMicroelectronics |
2,091 | - |
RFQ |
データシート |
Tape & Reel (TR) | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33 nC @ 10 V | ±30V | 1000 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFSL3107PBFMOSFET N-CH 75V 195A TO262 Infineon Technologies |
4,390 | - |
RFQ |
データシート |
Bulk,Tube | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9370 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPDD60R125G7XTMA1MOSFET N-CH 600V 20A HDSOP-10 Infineon Technologies |
2,156 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXTA3N100PMOSFET N-CH 1000V 3A TO263 IXYS |
2,507 | - |
RFQ |
データシート |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3A (Tc) | 10V | 4.8Ohm @ 1.5A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXTP56N15TMOSFET N-CH 150V 56A TO220AB IXYS |
2,066 | - |
RFQ |
データシート |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 56A (Tc) | 10V | 36mOhm @ 28A, 10V | 4.5V @ 250µA | 34 nC @ 10 V | ±30V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
TSM70N600ACL X0GMOSFET N-CH 700V 8A TO262S Taiwan Semiconductor Corporation |
2,807 | - |
RFQ |
データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPB120N10S403ATMA1MOSFET N-CH 100V 120A D2PAK Infineon Technologies |
3,841 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPA65R150CFDXKSA2MOSFET N-CH 650V 22.4A TO220 Infineon Technologies |
2,781 | - |
RFQ |
データシート |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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