トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTBG160N120SC1

NTBG160N120SC1

SICFET N-CH 1200V 19.5A D2PAK

onsemi
661 -

RFQ

NTBG160N120SC1

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 19.5A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 33.8 nC @ 20 V +25V, -15V 678 pF @ 800 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP60N043DM9

STP60N043DM9

N-CHANNEL 600 V, 38 MOHM TYP., 5

STMicroelectronics
140 -

RFQ

STP60N043DM9

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 56A (Tc) 10V 43mOhm @ 28A, 10V 4.5V @ 250µA 78.6 nC @ 10 V ±30V 4675 pF @ 400 V - 245W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY60NK30Z

STY60NK30Z

MOSFET N-CH 300V 60A MAX247

STMicroelectronics
413 -

RFQ

STY60NK30Z

データシート

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 100µA 220 nC @ 10 V ±30V 7200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H070LDG-TR

TP65H070LDG-TR

650 V 25 A GAN FET

Transphorm
206 -

RFQ

TP65H070LDG-TR

データシート

Tape & Reel (TR),Cut Tape (CT) TP65H070L Active N-Channel GaNFET (Gallium Nitride) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFW60N65M5

STFW60N65M5

MOSFET N-CH 650V 46A ISOWATT

STMicroelectronics
282 -

RFQ

STFW60N65M5

データシート

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 59mOhm @ 23A, 10V 5V @ 250µA 139 nC @ 10 V ±25V 6810 pF @ 100 V - 79W (Tc) 150°C (TJ) Through Hole
TSM60NB099CF C0G

TSM60NB099CF C0G

MOSFET N-CH 600V 38A ITO220S

Taiwan Semiconductor Corporation
941 -

RFQ

TSM60NB099CF C0G

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 5.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW75N60DM6

STW75N60DM6

MOSFET N-CH 600V 72A TO247

STMicroelectronics
391 -

RFQ

STW75N60DM6

データシート

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) - - - - - - - - - Through Hole
APT34F60S

APT34F60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
105 -

RFQ

APT34F60S

データシート

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
E3M0060065D

E3M0060065D

60M 650V SIC AUTOMOTIVE MOSFET

Wolfspeed, Inc.
410 -

RFQ

E3M0060065D

データシート

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 3.6mA 46 nC @ 15 V +19V, -8V 1170 pF @ 600 V - 131W (Tc) -40°C ~ 175°C (TJ) Through Hole
STL42N65M5

STL42N65M5

MOSFET N-CH 650V 4A PWRFLAT HV

STMicroelectronics
2,918 -

RFQ

STL42N65M5

データシート

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4A (Ta), 34A (Tc) 10V 79mOhm @ 16.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 4650 pF @ 100 V - 3W (Ta), 208W (Tc) 150°C (TJ) Surface Mount
STWA75N60DM6

STWA75N60DM6

MOSFET N-CH 600V 72A TO247

STMicroelectronics
478 -

RFQ

STWA75N60DM6

データシート

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 72A (Tc) - - - - - - - - - Through Hole
STW70N60DM6-4

STW70N60DM6-4

MOSFET N-CH 600V 62A TO247-4

STMicroelectronics
170 -

RFQ

STW70N60DM6-4

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) 10V 42mOhm @ 31A, 10V 4.75V @ 250µA 99 nC @ 10 V ±25V 4360 pF @ 100 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
E3M0060065K

E3M0060065K

60M 650V SIC AUTOMOTIVE MOSFET

Wolfspeed, Inc.
450 -

RFQ

E3M0060065K

データシート

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 37A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 3.6mA 49 nC @ 15 V +19V, -8V 1170 pF @ 600 V - 131W (Tc) -40°C ~ 175°C (TJ) Through Hole
SCT3080AW7TL

SCT3080AW7TL

SICFET N-CH 650V 29A TO263-7

Rohm Semiconductor
929 -

RFQ

SCT3080AW7TL

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) - 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 125W 175°C (TJ) Surface Mount
TSM60NB099PW C1G

TSM60NB099PW C1G

MOSFET N-CHANNEL 600V 38A TO247

Taiwan Semiconductor Corporation
2,057 -

RFQ

TSM60NB099PW C1G

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 11.7A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTBG045N065SC1

NTBG045N065SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi
690 -

RFQ

NTBG045N065SC1

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 62A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1890 pF @ 325 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6076MNZ1C9

R6076MNZ1C9

MOSFET N-CHANNEL 600V 76A TO247

Rohm Semiconductor
435 -

RFQ

R6076MNZ1C9

データシート

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 55mOhm @ 38A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 7000 pF @ 25 V - 740W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH47N60F-F085

FCH47N60F-F085

MOSFET N-CH 600V 47A TO247-3

onsemi
427 -

RFQ

FCH47N60F-F085

データシート

Tube Automotive, AEC-Q101, SuperFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 75mOhm @ 47A, 10V 5V @ 250µA 250 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVBGS4D1N15MC

NVBGS4D1N15MC

MOSFET N-CH 150V 20A/185A D2PAK

onsemi
571 -

RFQ

NVBGS4D1N15MC

データシート

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Ta), 185A (Tc) 8V, 10V 4.1mOhm @ 104A, 10V 4.5V @ 574µA 88.9 nC @ 10 V ±20V 7285 pF @ 75 V - 3.7W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) Surface Mount
E3M0075120K

E3M0075120K

1200V AUTOMOTIVE SIC 75MOHM FET

Wolfspeed, Inc.
370 -

RFQ

E3M0075120K

データシート

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.6V @ 5mA 55 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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