トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ32N65X

IXTQ32N65X

MOSFET N-CH 650V 32A TO3P

IXYS
2,712 -

RFQ

IXTQ32N65X

データシート

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMTS0D4N04CTXG

NTMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

onsemi
2,330 -

RFQ

NTMTS0D4N04CTXG

データシート

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA67N60M6

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics
3,515 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N60X

IXFH24N60X

MOSFET N-CH 600V 24A TO247-3

IXYS
2,583 -

RFQ

IXFH24N60X

データシート

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW24N60CFDFKSA1

SPW24N60CFDFKSA1

MOSFET N-CH 650V 21.7A TO247-3

Infineon Technologies
2,371 -

RFQ

SPW24N60CFDFKSA1

データシート

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH26N60P

IXTH26N60P

MOSFET N-CH 600V 26A TO247

IXYS
2,105 -

RFQ

IXTH26N60P

データシート

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP18N60X

IXFP18N60X

MOSFET N-CH 600V 18A TO220AB

IXYS
3,410 -

RFQ

IXFP18N60X

データシート

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 230mOhm @ 9A, 10V 4.5V @ 1.5mA 35 nC @ 10 V ±30V 1440 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOK53S60

AOK53S60

MOSFET N-CH 600V 53A TO247

Alpha & Omega Semiconductor Inc.
2,739 -

RFQ

AOK53S60

データシート

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 26.5A, 10V 3.8V @ 250µA 59 nC @ 10 V ±30V 3034 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH102N15T

IXFH102N15T

MOSFET N-CH 150V 102A TO247AD

IXYS
3,462 -

RFQ

IXFH102N15T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZ65R095C7XKSA1

IPZ65R095C7XKSA1

MOSFET N-CH 650V 24A TO247-4

Infineon Technologies
14,683 -

RFQ

IPZ65R095C7XKSA1

データシート

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA90N20X3-TRL

IXFA90N20X3-TRL

MOSFET N-CH 200V 90A TO263

IXYS
3,094 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 12.8mOhm @ 45A, 10V 4.5V @ 1.5mA 78 nC @ 10 V ±20V 5420 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA72N30X3-TRL

IXFA72N30X3-TRL

MOSFET N-CH 300V 72A TO263

IXYS
3,084 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH96N15P

IXFH96N15P

MOSFET N-CH 150V 96A TO247AD

IXYS
2,136 -

RFQ

IXFH96N15P

データシート

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK065Z65Z,S1F

TK065Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage
3,429 -

RFQ

TK065Z65Z,S1F

データシート

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
G7P03S

G7P03S

P30V,RD(MAX)<22M@-10V,RD(MAX)<33

Goford Semiconductor
4,000 -

RFQ

G7P03S

データシート

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 22mOhm @ 3A, 10V 2V @ 250µA 24.5 nC @ 10 V ±20V 1253 pF @ 15 V - 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA18N60X

IXFA18N60X

MOSFET N-CH 600V 18A TO263AA

IXYS
2,737 -

RFQ

IXFA18N60X

データシート

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 230mOhm @ 9A, 10V 4.5V @ 1.5mA 35 nC @ 10 V ±30V 1440 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G33N03S

G33N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<13M

Goford Semiconductor
3,996 -

RFQ

G33N03S

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 12mOhm @ 8A, 10V 1.1V @ 250µA 13 nC @ 5 V ±20V 1550 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH22N50P

IXTH22N50P

MOSFET N-CH 500V 22A TO247

IXYS
3,397 -

RFQ

IXTH22N50P

データシート

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
G2012

G2012

N20V,RD(MAX)<[email protected],RD(MAX)<18

Goford Semiconductor
3,000 -

RFQ

G2012

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 12mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 10 V ±10V 1255 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STWA50N65DM2AG

STWA50N65DM2AG

MOSFET N-CH 650V 38A TO247

STMicroelectronics
2,777 -

RFQ

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 87mOhm @ 19A, 10V 5V @ 250µA 69 nC @ 10 V ±25V 3200 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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