トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STI13NM60N

STI13NM60N

MOSFET N-CH 500V 13A I2PAK

onsemi
3,868 -

RFQ

Tube * Active - - - - - - - - - - - - - -
PJS6421-AU_S1_000A1

PJS6421-AU_S1_000A1

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
1,815 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 1.8V, 4.5V 26mOhm @ 5A, 4.5V 1V @ 250µA 16.5 nC @ 4.5 V ±10V 1620 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK7Y160-100PX

BUK7Y160-100PX

MOSFET N-CH 100V LFPAK

Nexperia USA Inc.
2,295 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
YJL2301F

YJL2301F

P-CH MOSFET 20V 2A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,995 -

RFQ

YJL2301F

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 94mOhm @ 1.5A, 4.5V 1V @ 250µA 4.5 nC @ 4.5 V ±10V 327 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS169IXTSA1

BSS169IXTSA1

SMALL SIGNAL MOSFETS PG-SOT23-3

Infineon Technologies
1,417 -

RFQ

BSS169IXTSA1

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 0V, 10V 2.9Ohm @ 190mA, 10V 1.8V @ 50µA 2.1 nC @ 7 V ±20V 51 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8884

FDMC8884

9A, 30V, 0.019OHM, N-CHANNEL POW

Fairchild Semiconductor
448,778 -

RFQ

FDMC8884

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 15A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 685 pF @ 15 V - 2.3W (Ta), 18W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJQ4410P_R2_00001

PJQ4410P_R2_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,800 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 35A (Tc) 4.5V, 10V 12Ohm @ 10A, 10V 2.5V @ 250µA 7.1 nC @ 4.5 V ±20V 660 pF @ 25 V - 2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJS6415_S1_00001

PJS6415_S1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,975 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 5.2A (Ta) 1.8V, 4.5V 56mOhm @ 5.2A, 4.5V 1.2V @ 250µA 18 nC @ 4.5 V ±12V 765 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK6212-40C,118

BUK6212-40C,118

NEXPERIA BUK6212-40C - 50A, 40V

Nexperia USA Inc.
54,438 -

RFQ

BUK6212-40C,118

データシート

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) - 11.2mOhm @ 12A, 10V 2.8V @ 1mA 33.9 nC @ 10 V ±16V 1900 pF @ 25 V - 80W -55°C ~ 175°C (TJ)
PJS6413_S1_00001

PJS6413_S1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,140 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.8V, 4.5V 82mOhm @ 4.4A, 4.5V 1.2V @ 250µA 7 nC @ 10 V ±12V 522 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJS6404_S1_00001

PJS6404_S1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,890 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 4.5V, 10V 32mOhm @ 6.8A, 10V 2.1V @ 250µA 7.8 nC @ 10 V ±20V 343 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G40P03K

G40P03K

P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<

Goford Semiconductor
447 -

RFQ

G40P03K

データシート

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V - - 138W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G02P06

G02P06

P60V,RD(MAX)<190M@-10V,RD(MAX)<2

Goford Semiconductor
1,495 -

RFQ

G02P06

データシート

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A - 190mOhm @ 1A, 10V 2.5V @ 250µA 11.3 nC @ 10 V ±20V 573 pF @ 30 V - 1.5W -55°C ~ 150°C (TJ) Surface Mount
PJA3409-AU_R1_000A1

PJA3409-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.
2,959 -

RFQ

PJA3409-AU_R1_000A1

データシート

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4.5V, 10V 110mOhm @ 2.9A, 10V 2.1V @ 250µA 9.8 nC @ 10 V ±20V 396 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ632-M-TD-E

2SJ632-M-TD-E

2SJ632 - P-CHANNEL SILICON MOSFE

onsemi
47,000 -

RFQ

2SJ632-M-TD-E

データシート

Bulk * Active - - - - - - - - - - - - - -
PJA3435_R1_00001

PJA3435_R1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,908 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.2Ohm @ 500mA, 4.5V 1V @ 250µA 1.4 nC @ 4.5 V ±10V 38 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2302

2302

MOSFET N-CH 20V 4.3A SOT-23

Goford Semiconductor
2,027 -

RFQ

2302

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 27mOhm @ 2.2A, 4.5V 1.1V @ 250µA 10 nC @ 4.5 V ±10V 300 pF @ 10 V Standard 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ058N03MSG

BSZ058N03MSG

BSZ058N03 - 12V-300V N-CHANNEL P

Infineon Technologies
11,233 -

RFQ

BSZ058N03MSG

データシート

Bulk * Active - - - - - - - - - - - - - -
G2014

G2014

N20V,RD(MAX)<[email protected],RD(MAX)<11M

Goford Semiconductor
2,980 -

RFQ

G2014

データシート

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Tc) 2.5V, 10V 7mOhm @ 5A, 10V 900mV @ 250µA 17.5 nC @ 4.5 V ±12V 1710 pF @ 10 V - 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PH7730DLX

PH7730DLX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.
3,869 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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