トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH94N30T

IXFH94N30T

MOSFET N-CH 300V 94A TO247AD

IXYS
3,870 -

RFQ

IXFH94N30T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 190 nC @ 10 V ±20V 11400 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M45BVFRG

APT20M45BVFRG

MOSFET N-CH 200V 56A TO247

Microchip Technology
3,824 -

RFQ

APT20M45BVFRG

データシート

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) 10V 45mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V ±30V 4860 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5017BVRG

APT5017BVRG

MOSFET N-CH 500V 30A TO247

Microchip Technology
3,511 -

RFQ

APT5017BVRG

データシート

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) - 170mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 5280 pF @ 25 V - - - Through Hole
APT1201R6BVRG

APT1201R6BVRG

MOSFET N-CH 1200V 8A TO-247

Microchip Technology
2,083 -

RFQ

Tube * Active - - - - - - - - - - - - - -
IPDQ60R035CFD7XTMA1

IPDQ60R035CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,883 -

RFQ

Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
IXFR18N90P

IXFR18N90P

MOSFET N-CH 900V 10.5A ISOPLS247

IXYS
3,165 -

RFQ

IXFR18N90P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 10.5A (Tc) 10V 660mOhm @ 9A, 10V 6V @ 1mA 97 nC @ 10 V ±30V 5230 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT88N30P

IXFT88N30P

MOSFET N-CH 300V 88A TO268

IXYS
2,174 -

RFQ

IXFT88N30P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH64N65X

IXTH64N65X

MOSFET N-CH 650V 64A TO247

IXYS
3,378 -

RFQ

IXTH64N65X

データシート

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 51mOhm @ 32A, 10V 5V @ 250µA 143 nC @ 10 V ±30V 5500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ94N30P3

IXFQ94N30P3

MOSFET N-CH 300V 94A TO3P

IXYS
2,369 -

RFQ

IXFQ94N30P3

データシート

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH10N100

IXFH10N100

MOSFET N-CH 1KV 10A TO-247AD

IXYS
3,708 -

RFQ

IXFH10N100

データシート

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.2Ohm @ 5A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX170N20T

IXFX170N20T

MOSFET N-CH 200V 170A PLUS247-3

IXYS
3,434 -

RFQ

IXFX170N20T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 11mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 19600 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX140N25T

IXFX140N25T

MOSFET N-CH 250V 140A PLUS247-3

IXYS
2,045 -

RFQ

IXFX140N25T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 140A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX120N30T

IXFX120N30T

MOSFET N-CH 300V 120A PLUS247-3

IXYS
3,923 -

RFQ

IXFX120N30T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 20000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6030BVRG

APT6030BVRG

MOSFET N-CH 600V 21A TO247

Microchip Technology
3,482 -

RFQ

APT6030BVRG

データシート

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 300mOhm @ 10.5A, 10V 4V @ 1mA 150 nC @ 10 V - 3750 pF @ 25 V - - - Through Hole
IXFJ80N25X3

IXFJ80N25X3

MOSFET N-CH 250V 44A ISO TO247-3

IXYS
3,153 -

RFQ

IXFJ80N25X3

データシート

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 18mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTJ6N150

IXTJ6N150

MOSFET N-CH 1500V 3A TO247

IXYS
3,639 -

RFQ

IXTJ6N150

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 3.85Ohm @ 3A, 10V 5V @ 250µA 67 nC @ 10 V ±30V 2230 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT43M60L

APT43M60L

MOSFET N-CH 600V 45A TO264

Microchip Technology
2,015 -

RFQ

APT43M60L

データシート

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 45A (Tc) 10V 150mOhm @ 21A, 10V 5V @ 2.5mA 215 nC @ 10 V ±30V 8590 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34M60B

APT34M60B

MOSFET N-CH 600V 36A TO247

Microchip Technology
3,752 -

RFQ

APT34M60B

データシート

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT75M50B2

APT75M50B2

MOSFET N-CH 500V 75A T-MAX

Microchip Technology
3,840 -

RFQ

APT75M50B2

データシート

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 75A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK120N30T

IXFK120N30T

MOSFET N-CH 300V 120A TO264AA

IXYS
3,943 -

RFQ

IXFK120N30T

データシート

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 20000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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