写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD60R360CFD7ATMA1MOSFET N-CH 650V 7A TO252-3-313 Infineon Technologies |
1,896 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 14 nC @ 10 V | ±20V | 679 pF @ 400 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SST210 SOT-143 4LHIGH SPEED N-CHANNEL LATERAL DMO Linear Integrated Systems, Inc. |
4,755 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SST210 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50mA (Ta) | 5V, 25V | 50Ohm @ 1mA, 10V | 1.5V @ 1µA | - | ±40V | - | - | 300mW (Ta) | -55°C ~ 125°C (TJ) | Surface Mount |
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IPB100N04S4H2ATMA1MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
1,001 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 70µA | 90 nC @ 10 V | ±20V | 7180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRL7766M2TRMOSFET N-CH 100V 10A DIRECTFET International Rectifier |
37,230 | - |
RFQ |
![]() データシート |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 31A, 10V | 2.5V @ 150µA | 66 nC @ 4.5 V | ±16V | 5305 pF @ 25 V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRL3705ZSTRLMOSFET N-CH 55V 75A D2PAK International Rectifier |
12,554 | - |
RFQ |
![]() データシート |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 8mOhm @ 52A, 10V | 3V @ 250µA | 60 nC @ 5 V | - | 2880 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSB165N15NZ3GBSB165N15 - 12V-300V N-CHANNEL P Infineon Technologies |
4,337 | - |
RFQ |
![]() データシート |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DI110N15PQMOSFET, 150V, 110A, 56W Diotec Semiconductor |
20,000 | - |
RFQ |
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Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 110A (Tc) | 10V | 12mOhm @ 60A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±20V | 3700 pF @ 75 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRF2805STRLMOSFET N-CH 55V 135A D2PAK International Rectifier |
24,000 | - |
RFQ |
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Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 135A (Tc) | - | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | - | 5110 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD380P06NMATMA1MOSFET P-CH 60V 35A TO252-3 Infineon Technologies |
1,227 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 1.7mA | 63 nC @ 10 V | ±20V | 2500 pF @ 30 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRF3205AUIRF3205 - 55V-60V N-CHANNEL AU International Rectifier |
9,950 | - |
RFQ |
![]() データシート |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 62A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±20V | 3247 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFSL7430PBFMOSFET N-CH 40V 195A D2PAK International Rectifier |
4,360 | - |
RFQ |
![]() データシート |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQA13N50CFMOSFET N-CH 500V 15A TO3PN Fairchild Semiconductor |
2,481 | - |
RFQ |
![]() データシート |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 218W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NP80N06MLG-S18-AYNP80N06MLG-S18-AY - SWITCHINGN-C Renesas |
22,200 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 8.6mOhm @ 40A, 10V | 2.5V @ 250µA | 128 nC @ 10 V | ±20V | 6900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C | Through Hole | |
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AUIRFBA1405MOSFET N-CH 55V 95A SUPER-220 International Rectifier |
2,024 | - |
RFQ |
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Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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APT1201R4BFLLGMOSFET N-CH 1200V 9A TO247 Microchip Technology |
2,374 | - |
RFQ |
![]() データシート |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFR44N50Q3MOSFET N-CH 500V 25A ISOPLUS247 IXYS |
3,991 | - |
RFQ |
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Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 25A (Tc) | 10V | 154mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFN280N07MOSFET N-CH 70V 280A SOT-227B IXYS |
3,811 | - |
RFQ |
![]() データシート |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70 V | 280A (Tc) | 10V | 5mOhm @ 120A, 10V | 4V @ 8mA | 420 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTT140N075L2HVMOSFET N-CH 75V 140A TO268HV IXYS |
3,935 | - |
RFQ |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 4.5V @ 250µA | 275 nC @ 10 V | ±20V | 9300 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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APT8030LVRGMOSFET N-CH 800V 27A TO264 Microchip Technology |
2,242 | - |
RFQ |
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Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole |
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APT34F100B2MOSFET N-CH 1000V 35A T-MAX Microchip Technology |
3,403 | - |
RFQ |
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Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |