トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ494-AZ

2SJ494-AZ

2SJ494 - SWITCHING P-CHANNEL POW

Renesas
9,158 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 50mOhm @ 10A, 10V 2V @ 1mA 74 nC @ 10 V ±20V 2360 pF @ 10 V - 2W (Ta), 35W (Tc) 150°C Through Hole
AUIRFS3607TRL

AUIRFS3607TRL

MOSFET N-CH 75V 80A D2PAK

International Rectifier
16,374 -

RFQ

AUIRFS3607TRL

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7647S2TR

AUIRF7647S2TR

MOSFET N-CH 100V 5.9A DIRECTFET

Infineon Technologies
4,568 -

RFQ

AUIRF7647S2TR

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.9A (Ta), 24A (Tc) 10V 31mOhm @ 14A, 10V 5V @ 50µA 21 nC @ 10 V ±20V 910 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP80N055MHE-S18-AY

NP80N055MHE-S18-AY

NP80N055MHE-S18-AY - SWITCHINGN-

Renesas
2,400 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3600 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C Through Hole
2SK3057-AZ

2SK3057-AZ

2SK3057 - POWER TRS2

Renesas Electronics America Inc
2,378 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP80N055KLE-E1-AY

NP80N055KLE-E1-AY

NP80N055KLE-E1-AY - SWITCHINGN-C

Renesas
1,600 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 4400 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C Surface Mount
IRF6616TRPBF

IRF6616TRPBF

MOSFET N-CH 40V 19A DIRECTFET

Infineon Technologies
6,756 -

RFQ

IRF6616TRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NDP708AE

NDP708AE

60A, 80V, 0.022OHM, N-CHANNEL MO

Fairchild Semiconductor
3,240 -

RFQ

NDP708AE

データシート

Bulk * Active - - - - - - - - - - - - - -
IPA037N08N3

IPA037N08N3

POWER FIELD-EFFECT TRANSISTOR, 7

Infineon Technologies
2,000 -

RFQ

IPA037N08N3

データシート

Bulk * Active - - - - - - - - - - - - - -
AUIRF4905L

AUIRF4905L

AUIRF4905 - 20V-150V P-CHANNEL A

Infineon Technologies
1,200 -

RFQ

AUIRF4905L

データシート

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7580MTRPBF

IRF7580MTRPBF

MOSFET N-CH 60V 114A DIRECTFET

Infineon Technologies
2,805 -

RFQ

IRF7580MTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 114A (Tc) 6V, 10V 3.6mOhm @ 70A, 10V 3.7V @ 150µA 180 nC @ 10 V ±20V 6510 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R180P7ATMA1

IPD60R180P7ATMA1

MOSFET N-CH 650V 18A TO252-3

Infineon Technologies
1,327 -

RFQ

IPD60R180P7ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP21N60N

FCP21N60N

FCP21N60 - N-CHANNEL, MOSFET

onsemi
6,400 -

RFQ

FCP21N60N

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
BSC070N10NS5ATMA1

BSC070N10NS5ATMA1

MOSFET N-CH 100V 80A TDSON

Infineon Technologies
6,078 -

RFQ

BSC070N10NS5ATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7mOhm @ 40A, 10V 3.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 50 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8301MTRPBF

IRF8301MTRPBF

MOSFET N-CH 30V 34A DIRECTFET

Infineon Technologies
7,080 -

RFQ

IRF8301MTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta), 192A (Tc) 4.5V, 10V 1.5mOhm @ 32A, 10V 2.35V @ 150µA 77 nC @ 4.5 V ±20V 6140 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
APT12060LVFRG

APT12060LVFRG

MOSFET N-CH 1200V 20A TO264

Microchip Technology
3,151 -

RFQ

APT12060LVFRG

データシート

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) - 600mOhm @ 10A, 10V 4V @ 1mA 650 nC @ 10 V - 9500 pF @ 25 V - - - Through Hole
APT12067LFLLG

APT12067LFLLG

MOSFET N-CH 1200V 18A TO264

Microchip Technology
3,051 -

RFQ

APT12067LFLLG

データシート

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) - 670mOhm @ 9A, 10V 5V @ 2.5mA 150 nC @ 10 V - 4420 pF @ 25 V - - - Through Hole
IXFR26N100P

IXFR26N100P

MOSFET N-CH 1000V 15A ISOPLUS247

IXYS
3,804 -

RFQ

IXFR26N100P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 430mOhm @ 13A, 10V 6.5V @ 1mA 197 nC @ 10 V ±30V 11900 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
MKE38P600LB-TRR

MKE38P600LB-TRR

MOSFET N-CH 600V 50A SMPD

IXYS
3,868 -

RFQ

MKE38P600LB-TRR

データシート

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) - - - - - - - - - Surface Mount
APT8020B2LLG

APT8020B2LLG

MOSFET N-CH 800V 38A T-MAX

Microchip Technology
3,927 -

RFQ

APT8020B2LLG

データシート

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 200mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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