写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFB7437PBFIRFB7437 - 12V-300V N-CHANNEL PO International Rectifier |
2,762 | - |
RFQ |
![]() データシート |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFR6215TRLPBFIRFR6215 - 20V-250V P-CHANNEL PO International Rectifier |
3,955 | - |
RFQ |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFP4229PBFIRFP4229 - 12V-300V N-CHANNEL PO International Rectifier |
3,487 | - |
RFQ |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4560 pF @ 25 V | - | 310W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
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IRF3205ZSTRLPBFIRF3205 - 12V-300V N-CHANNEL POW International Rectifier |
3,570 | - |
RFQ |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IRF3710ZPBFIRF3710 - 12V-300V N-CHANNEL POW International Rectifier |
3,390 | - |
RFQ |
![]() データシート |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQB27N25TM-F085P250V, 26A, 108M, D2PAKN-CHANNEL onsemi |
2,240 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 1330 pF @ 25 V | - | 417W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | |
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FDC658AP-G-30V SINGLE P-CHANNEL LOGIC LEVE onsemi |
3,032 | - |
RFQ |
Tape & Reel (TR) | - | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 8.1 nC @ 5 V | ±25V | 680 pF @ 15 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
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BSS138-F16950V N-CHANNEL LOGIC LEVEL ENHANC onsemi |
2,438 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 220mA (Ta) | 4.5V, 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4 nC @ 10 V | ±20V | 27 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
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FDC637AN-NB5E023ASINGLE N-CHANNEL 2.5V SPECIFIED onsemi |
3,093 | - |
RFQ |
Tape & Reel (TR) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 16 nC @ 4.5 V | ±8V | 1330 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
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2N7002-F169N-CHANNEL ENHANCEMENT MODE FIELD onsemi |
2,150 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 200mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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BUK764R0-55B,118BUK764R0-55B - N-CHANNEL TRENCHM Nexperia USA Inc. |
3,473 | - |
RFQ |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 86 nC @ 10 V | ±20V | 6776 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQA70N15POWER FIELD-EFFECT TRANSISTOR, 7 onsemi |
2,914 | - |
RFQ |
![]() データシート |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 70A (Tc) | 10V | 28mOhm @ 35A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±25V | 5400 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SPP04N50C3XKSA1SPP04N50 - COOLMOS N-CHANNEL POW Infineon Technologies |
2,153 | - |
RFQ |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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APTC60SKM24CT1GMOSFET N-CH 600V 95A SP1 Microchip Technology |
3,704 | - |
RFQ |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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APT8011JLLMOSFET N-CH 800V 51A ISOTOP Microchip Technology |
2,343 | - |
RFQ |
![]() データシート |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | Chassis Mount |
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APT60M60JLLMOSFET N-CH 600V 70A ISOTOP Microchip Technology |
2,602 | - |
RFQ |
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Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT50M38JFLLMOSFET N-CH 500V 88A ISOTOP Microchip Technology |
3,980 | - |
RFQ |
![]() データシート |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | - | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | - | 12000 pF @ 25 V | - | - | - | Chassis Mount |
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APT10026JLLMOSFET N-CH 1000V 30A ISOTOP Microchip Technology |
2,097 | - |
RFQ |
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Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | Chassis Mount |
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APT8011JFLLMOSFET N-CH 800V 51A ISOTOP Microchip Technology |
2,543 | - |
RFQ |
![]() データシート |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | Chassis Mount |
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APT10021JLLMOSFET N-CH 1000V 37A ISOTOP Microchip Technology |
2,424 | - |
RFQ |
![]() データシート |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |