トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF221

IRF221

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
3,154 -

RFQ

IRF221

データシート

Bulk * Active - - - - - - - - - - - - - -
IRL3803VPBF

IRL3803VPBF

IRL3803 - 12V-300V N-CHANNEL POW

International Rectifier
3,323 -

RFQ

IRL3803VPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 5.5mOhm @ 71A, 10V 1V @ 250µA 76 nC @ 4.5 V ±16V 3720 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9E04-40A,127

BUK9E04-40A,127

MOSFET N-CH 40V 75A I2PAK

NXP USA Inc.
3,153 -

RFQ

BUK9E04-40A,127

データシート

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.3V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 128 nC @ 5 V ±15V 8260 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDN352AP

FDN352AP

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,797 -

RFQ

FDN352AP

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 4.5V, 10V 180mOhm @ 1.3A, 10V 2.5V @ 250µA 1.9 nC @ 4.5 V ±25V 150 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2804S

AUIRF2804S

MOSFET N-CH 40V 195A D2PAK

International Rectifier
3,524 -

RFQ

AUIRF2804S

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R399CP

IPP50R399CP

IPP50R399 - 500V COOLMOS N-CHANN

Infineon Technologies
2,228 -

RFQ

IPP50R399CP

データシート

Bulk * Active - - - - - - - - - - - - - -
FDN340P

FDN340P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,571 -

RFQ

FDN340P

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 779 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP60R180C7

IPP60R180C7

13A, 600V, 0.18OHM, N-CHANNEL MO

Infineon Technologies
2,168 -

RFQ

IPP60R180C7

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH78N60X3

IXFH78N60X3

MOSFET ULTRA JCT 600V 78A TO247

IXYS
3,133 -

RFQ

IXFH78N60X3

データシート

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 78A 10V 38mOhm @ 39A, 10V 5V @ 4mA 70 nC @ 10 V ±20V 4700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX64N60P3

IXFX64N60P3

MOSFET N-CH 600V 64A PLUS247-3

IXYS
3,049 -

RFQ

IXFX64N60P3

データシート

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 5V @ 4mA 145 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK88N30P

IXFK88N30P

MOSFET N-CH 300V 88A TO264AA

IXYS
3,826 -

RFQ

IXFK88N30P

データシート

Bulk HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N50L2

IXTH30N50L2

MOSFET N-CH 500V 30A TO247

IXYS
3,255 -

RFQ

IXTH30N50L2

データシート

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 4.5V @ 250µA 240 nC @ 10 V ±20V 8100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH140P10T

IXTH140P10T

MOSFET P-CH 100V 140A TO247

IXYS
3,723 -

RFQ

IXTH140P10T

データシート

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 12mOhm @ 70A, 10V 4V @ 250µA 400 nC @ 10 V ±15V 31400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9214PBF

IRFR9214PBF

MOSFET P-CH 250V 2.7A DPAK

Vishay Siliconix
3,239 -

RFQ

IRFR9214PBF

データシート

Tube - Active P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT3080ARC14

SCT3080ARC14

SICFET N-CH 650V 30A TO247-4L

Rohm Semiconductor
2,047 -

RFQ

SCT3080ARC14

データシート

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W 175°C (TJ) Through Hole
IXFK64N60P

IXFK64N60P

MOSFET N-CH 600V 64A TO264AA

IXYS
2,584 -

RFQ

IXFK64N60P

データシート

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H035WS

TP65H035WS

GANFET N-CH 650V 46.5A TO247-3

Transphorm
2,364 -

RFQ

TP65H035WS

データシート

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 46.5A (Tc) 12V 41mOhm @ 30A, 10V 4.8V @ 1mA 36 nC @ 10 V ±20V 1500 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY60NM50

STY60NM50

MOSFET N-CH 500V 60A MAX247

STMicroelectronics
319 -

RFQ

STY60NM50

データシート

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 50mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7500 pF @ 25 V - 560W (Tc) 150°C (TJ) Through Hole
SUP40012EL-GE3

SUP40012EL-GE3

MOSFET N-CH 40V 150A TO220AB

Vishay Siliconix
608 -

RFQ

SUP40012EL-GE3

データシート

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.79mOhm @ 30A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 10930 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STE48NM50

STE48NM50

MOSFET N-CH 550V 48A ISOTOP

STMicroelectronics
2,476 -

RFQ

STE48NM50

データシート

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 550 V 48A (Tc) 10V 100mOhm @ 24A, 10V 5V @ 250µA 117 nC @ 10 V ±30V 3700 pF @ 25 V - 450W (Tc) 150°C (TJ) Chassis Mount
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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