トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB80N06S2L-11

IPB80N06S2L-11

IPB80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,900 -

RFQ

IPB80N06S2L-11

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH5301TRPBF

IRFH5301TRPBF

IRFH5301 - 12V-300V N-CHANNEL PO

International Rectifier
2,370 -

RFQ

IRFH5301TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.85mOhm @ 50A, 10V 2.35V @ 100µA 77 nC @ 10 V ±20V 5114 pF @ 15 V - 3.6W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN70R1K5CE

IPN70R1K5CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
2,148 -

RFQ

IPN70R1K5CE

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDV305N

FDV305N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,630 -

RFQ

FDV305N

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 900mA (Ta) 2.5V, 4.5V 220mOhm @ 900mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±12V 109 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF332

IRF332

4.5A, 400V, 1.5OHM, N-CHANNEL PO

International Rectifier
3,705 -

RFQ

IRF332

データシート

Bulk * Active - - - - - - - - - - - - - -
FDPF041N06BL1

FDPF041N06BL1

MOSFET N-CH 60V 77A TO220F

Fairchild Semiconductor
3,635 -

RFQ

FDPF041N06BL1

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 77A (Tc) 10V 4.1mOhm @ 77A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 5690 pF @ 30 V - 44.1W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDY301NZ

FDY301NZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,063 -

RFQ

FDY301NZ

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.5V @ 250µA 1.1 nC @ 4.5 V ±12V 60 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD25N06S4L-30ATMA2

IPD25N06S4L-30ATMA2

IPD25N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,407 -

RFQ

IPD25N06S4L-30ATMA2

データシート

Bulk * Active - - - - - - - - - - - - - -
IRF4104SPBF

IRF4104SPBF

IRF4104 - 12V-300V N-CHANNEL POW

International Rectifier
2,845 -

RFQ

IRF4104SPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R125CP

IPP60R125CP

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,006 -

RFQ

IPP60R125CP

データシート

Bulk * Active - - - - - - - - - - - - - -
IPP60R600P6

IPP60R600P6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
2,495 -

RFQ

IPP60R600P6

データシート

Bulk * Active - - - - - - - - - - - - - -
FDA69N25

FDA69N25

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi
3,457 -

RFQ

FDA69N25

データシート

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 69A (Tc) 10V 41mOhm @ 34.5A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4640 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R125P6

IPW60R125P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,799 -

RFQ

IPW60R125P6

データシート

Bulk * Active - - - - - - - - - - - - - -
IRF8252PBF

IRF8252PBF

MOSFET N-CH 25V 25A 8SO

International Rectifier
2,626 -

RFQ

IRF8252PBF

データシート

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5612

FDD5612

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,731 -

RFQ

FDD5612

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 5.4A (Ta) 6V, 10V 55mOhm @ 5.4A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 660 pF @ 30 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL024NTRPBF

IRFL024NTRPBF

IRFL024 - 12V-300V N-CHANNEL POW

International Rectifier
2,776 -

RFQ

IRFL024NTRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDP8870

FDP8870

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,687 -

RFQ

FDP8870

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 156A (Tc) 4.5V, 10V 4.1mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP254BFP001

IRFP254BFP001

25A, 250V, 0.14OHM, N-CHANNEL PO

Fairchild Semiconductor
3,106 -

RFQ

IRFP254BFP001

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 140mOhm @ 12.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 221W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR8401TRL

AUIRFR8401TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier
3,469 -

RFQ

AUIRFR8401TRL

データシート

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7805Q

AUIRF7805Q

MOSFET N-CH 30V 13A 8SO

International Rectifier
2,027 -

RFQ

AUIRF7805Q

データシート

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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