トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU7540PBF

IRFU7540PBF

MOSFET N-CH 60V 90A IPAK

International Rectifier
3,661 -

RFQ

IRFU7540PBF

データシート

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 4.8mOhm @ 66A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4360 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK962R8-60E,118

BUK962R8-60E,118

NOW NEXPERIA BUK962R8-60E - 120A

NXP USA Inc.
3,804 -

RFQ

BUK962R8-60E,118

データシート

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V 2.5mOhm @ 25A, 10V 2.1V @ 1mA 92 nC @ 5 V ±10V 15600 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS0300S

FDMS0300S

MOSFET N-CH 30V 31A/49A 8PQFN

Fairchild Semiconductor
2,037 -

RFQ

FDMS0300S

データシート

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 49A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 3V @ 1mA 133 nC @ 10 V ±20V 8705 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDY100PZ

FDY100PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,771 -

RFQ

FDY100PZ

データシート

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 1.5V @ 250µA 1.4 nC @ 4.5 V ±8V 100 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2804LPBF

IRF2804LPBF

IRF2804 - 12V-300V N-CHANNEL POW

International Rectifier
3,747 -

RFQ

IRF2804LPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V - 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9Y153-100E,115

BUK9Y153-100E,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,421 -

RFQ

BUK9Y153-100E,115

データシート

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 5V 146mOhm @ 2A, 10V 2.1V @ 1mA 6.8 nC @ 5 V ±10V 716 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SJ657

2SJ657

P-CHANNL SILICON MOSFET FOR GENE

Sanyo
2,865 -

RFQ

2SJ657

データシート

Bulk * Active - - - - - - - - - - - - - -
IRF443

IRF443

MOSFET N-CH 450V 4A TO204AE

International Rectifier
3,060 -

RFQ

IRF443

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4A - - - - - - - 75W - Through Hole
IRFS4310PBF

IRFS4310PBF

MOSFET N-CH 100V 130A D2PAK

International Rectifier
2,705 -

RFQ

IRFS4310PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4610TRLPBF

IRFS4610TRLPBF

IRFS4610 - 12V-300V N-CHANNEL PO

International Rectifier
2,343 -

RFQ

IRFS4610TRLPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R060C7

IPW60R060C7

IPW60R060 - 600V COOLMOS N-CHANN

Infineon Technologies
3,604 -

RFQ

IPW60R060C7

データシート

Bulk * Active - - - - - - - - - - - - - -
IRFS7540TRLPBF

IRFS7540TRLPBF

MOSFET N-CH 60V 110A D2PAK

International Rectifier
2,988 -

RFQ

IRFS7540TRLPBF

データシート

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFAE42

IRFAE42

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
2,131 -

RFQ

IRFAE42

データシート

Bulk * Active - - - - - - - - - - - - - -
FDMA8051L

FDMA8051L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,688 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1260 pF @ 20 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5670

FDD5670

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,050 -

RFQ

FDD5670

データシート

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 52A (Ta) 6V, 10V 15mOhm @ 10A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 2739 pF @ 15 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP61N20

FDP61N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
3,185 -

RFQ

FDP61N20

データシート

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 61A (Tc) 10V 41mOhm @ 30.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3380 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD25N06S2-40ATMA1

IPD25N06S2-40ATMA1

IPD25N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,775 -

RFQ

IPD25N06S2-40ATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 13A, 10V 4V @ 26µA 18 nC @ 10 V ±20V 513 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310TRL

AUIRFS4310TRL

MOSFET N-CH 100V 75A D2PAK

International Rectifier
3,318 -

RFQ

AUIRFS4310TRL

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310

AUIRFS4310

MOSFET N-CH 100V 75A D2PAK

International Rectifier
3,267 -

RFQ

AUIRFS4310

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R125P6

IPA60R125P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,380 -

RFQ

IPA60R125P6

データシート

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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