トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R380C6

IPP60R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
3,235 -

RFQ

IPP60R380C6

データシート

Bulk * Active - - - - - - - - - - - - - -
IPP65R380E6

IPP65R380E6

IPP65R380E6 - 650V-700V COOLMOS

Infineon Technologies
3,972 -

RFQ

IPP65R380E6

データシート

Bulk * Active - - - - - - - - - - - - - -
FDPF20N50FT

FDPF20N50FT

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,153 -

RFQ

FDPF20N50FT

データシート

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 260mOhm @ 10A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3390 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2672

FDS2672

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,852 -

RFQ

FDS2672

データシート

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 3.9A (Ta) 6V, 10V 70mOhm @ 3.9A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2535 pF @ 100 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS4620PBF

IRFS4620PBF

MOSFET N-CH 200V 24A D2PAK

International Rectifier
3,800 -

RFQ

IRFS4620PBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7534PBF

IRFSL7534PBF

MOSFET N-CH 60V 195A TO262

International Rectifier
2,443 -

RFQ

IRFSL7534PBF

データシート

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC7572S

FDMC7572S

MOSFET N-CH 25V 22.5A/40A PWR33

Fairchild Semiconductor
2,816 -

RFQ

FDMC7572S

データシート

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0310S

FDMS0310S

MOSFET N-CH 30V 19A/42A 8PQFN

Fairchild Semiconductor
2,749 -

RFQ

FDMS0310S

データシート

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 42A (Tc) 4.5V, 10V 4mOhm @ 18A, 10V 3V @ 1mA 46 nC @ 10 V ±20V 2820 pF @ 15 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R380C6

IPA60R380C6

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
3,298 -

RFQ

IPA60R380C6

データシート

Bulk * Active - - - - - - - - - - - - - -
FQP32N20C

FQP32N20C

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,244 -

RFQ

FQP32N20C

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
PMZB320UPE,315

PMZB320UPE,315

NOW NEXPERIA PMZB320UPE - SMALL

Nexperia USA Inc.
3,323 -

RFQ

PMZB320UPE,315

データシート

Bulk * Active - - - - - - - - - - - - - -
IPA80R310CE

IPA80R310CE

IPA80R310 - 800V COOLMOS N-CHANN

Infineon Technologies
3,886 -

RFQ

IPA80R310CE

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 16.7A (Tc) 10V 310mOhm @ 11A, 10V 3.9V @ 1mA 91 nC @ 10 V ±20V 2320 pF @ 100 V - 35W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRLMS1503TRPBF

IRLMS1503TRPBF

IRLMS1503 - 12V-300V N-CHANNEL P

International Rectifier
3,462 -

RFQ

IRLMS1503TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 100mOhm @ 2.2A, 10V 1V @ 250µA 9.6 nC @ 10 V ±20V 210 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLS3036TRL7PP

IRLS3036TRL7PP

IRLS3036 - 12V-300V N-CHANNEL PO

International Rectifier
3,649 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6662TRPBF

IRF6662TRPBF

IRF6662 - 12V-300V N-CHANNEL POW

International Rectifier
3,858 -

RFQ

IRF6662TRPBF

データシート

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 47A (Tc) 10V 22mOhm @ 8.2A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1360 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB031NE7N3G

IPB031NE7N3G

IPB031NE7 - 12V-300V N-CHANNEL P

Infineon Technologies
2,346 -

RFQ

IPB031NE7N3G

データシート

Bulk * Active - - - - - - - - - - - - - -
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

Fairchild Semiconductor
2,154 -

RFQ

FQPF4N90CT

データシート

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 960 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

Infineon Technologies
3,735 -

RFQ

IPP126N10N3G

データシート

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) - 12.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMCPB5530X

PMCPB5530X

NOW NEXPERIA PMCPB5530X - SMALL

NXP USA Inc.
2,210 -

RFQ

PMCPB5530X

データシート

Bulk * Active - - - - - - - - - - - - - -
PSMN8R040PS127

PSMN8R040PS127

MOSFET N-CH 40V 77A TO220AB

NXP USA Inc.
3,845 -

RFQ

PSMN8R040PS127

データシート

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Ta) - 7.6mOhm @ 25A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 1262 pF @ 12 V - 86W (Ta) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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