写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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BUZ32 HMOSFET N-CH 200V 9.5A TO220-3 Infineon Technologies |
3,049 | - |
RFQ |
![]() データシート |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73HXKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
3,896 | - |
RFQ |
![]() データシート |
Bulk,Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73H3046XKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
2,333 | - |
RFQ |
![]() データシート |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73A HMOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
3,974 | - |
RFQ |
![]() データシート |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73A H3046MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
2,875 | - |
RFQ |
![]() データシート |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73ALHXKSA1MOSFET N-CH 200V 5.5A TO220-3 Infineon Technologies |
5,846 | - |
RFQ |
![]() データシート |
Tube,Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 5V | 600mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ73LHXKSA1MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
2,450 | - |
RFQ |
![]() データシート |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 5V | 400mOhm @ 3.5A, 5V | 2V @ 1mA | - | ±20V | 840 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220 Infineon Technologies |
3,628 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA65R600C6XKSA1MOSFET N-CH 650V 7.3A TO220 Infineon Technologies |
2,787 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPI100N04S4H2AKSA1MOSFET N-CH 40V 100A TO262-3 Infineon Technologies |
18,000 | - |
RFQ |
![]() データシート |
Tube,Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4V @ 70µA | 90 nC @ 10 V | ±20V | 7180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPI50R250CPXKSA1MOSFET N-CH 500V 13A TO262-3 Infineon Technologies |
985 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI50R299CPXKSA1MOSFET N-CH 500V 12A TO262-3 Infineon Technologies |
3,054 | - |
RFQ |
![]() データシート |
Tube,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI530N15N3GXKSA1MOSFET N-CH 150V 21A TO262-3 Infineon Technologies |
2,907 | - |
RFQ |
![]() データシート |
Bulk,Tube | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPI65R110CFDXKSA1MOSFET N-CH 650V 31.2A TO262-3 Infineon Technologies |
16,398 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPI65R280C6XKSA1MOSFET N-CH 650V 13.8A TO262-3 Infineon Technologies |
1,500 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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ISP16DP10LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
3,533 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.1A (Ta), 3.9A (Tc) | 4.5V, 10V | 160mOhm @ 2.2A, 10V | 2V @ 1.037mA | 42 nC @ 10 V | ±20V | 2100 pF @ 50 V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSZ035N03MSGATMA1MOSFET N-CH 30V 18A/40A 8TSDSON Infineon Technologies |
3,325 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2V @ 250µA | 74 nC @ 10 V | ±20V | 5700 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPI65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO262-3 Infineon Technologies |
14,500 | - |
RFQ |
![]() データシート |
Bulk,Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO262-3 Infineon Technologies |
3,372 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPI65R600C6XKSA1MOSFET N-CH 650V 7.3A TO262-3 Infineon Technologies |
2,142 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |