トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI65R310CFD

IPI65R310CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
10,696 -

RFQ

IPI65R310CFD

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD65R660CFDATMA2

IPD65R660CFDATMA2

MOSFET N-CH 700V 6A TO252-3-313

Infineon Technologies
3,660 -

RFQ

IPD65R660CFDATMA2

データシート

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB120N04S404ATMA1

IPB120N04S404ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies
3,204 -

RFQ

IPB120N04S404ATMA1

データシート

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.6mOhm @ 100A, 10V 4V @ 40µA 55 nC @ 10 V ±20V 4100 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

MOSFET N-CH 900V 2.1A TO252-3

Infineon Technologies
3,139 -

RFQ

IPD90R1K2C3ATMA2

データシート

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 0.31mA 3.2 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP16CN10NGHKSA1

IPP16CN10NGHKSA1

MOSFET N-CH 100V 53A TO220-3

Infineon Technologies
2,259 -

RFQ

IPP16CN10NGHKSA1

データシート

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16.5mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI90R1K0C3

IPI90R1K0C3

N-CHANNEL POWER MOSFET

Infineon Technologies
11,990 -

RFQ

IPI90R1K0C3

データシート

Bulk * Obsolete - - - - - - - - - - - - - -
IPI60R385CP

IPI60R385CP

N-CHANNEL POWER MOSFET

Infineon Technologies
78,346 -

RFQ

IPI60R385CP

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSF134N10NJ3 G

BSF134N10NJ3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
4,635 -

RFQ

BSF134N10NJ3 G

データシート

Bulk * Active - - - - - - - - - - - - - -
BSB881N03LX3GXUMA1

BSB881N03LX3GXUMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
260,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRLU7843PBF

IRLU7843PBF

MOSFET N-CH 30V 161A IPAK

Infineon Technologies
3,657 -

RFQ

IRLU7843PBF

データシート

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF830PBF

IRF830PBF

MOSFET N-CH 500V 4.5A TO220AB

Infineon Technologies
3,571 -

RFQ

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR024N

AUIRFR024N

MOSFET N-CH 55V 17A TO252AA

Infineon Technologies
2,914 -

RFQ

AUIRFR024N

データシート

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R280P7SE8228XKSA1

IPA60R280P7SE8228XKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
2,746 -

RFQ

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAW60R280P7SE8228XKSA1

IPAW60R280P7SE8228XKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
2,007 -

RFQ

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF3007PBF

IRF3007PBF

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
2,450 -

RFQ

IRF3007PBF

データシート

Bulk,Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB012N03LX3GXUMA1

BSB012N03LX3GXUMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
4,699 -

RFQ

BSB012N03LX3GXUMA1

データシート

Bulk * Active - - - - - - - - - - - - - -
AUIRFR3806TRL

AUIRFR3806TRL

MOSFET N-CH 60V 43A DPAK

Infineon Technologies
2,875 -

RFQ

AUIRFR3806TRL

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU80R600P7AKMA1

IPU80R600P7AKMA1

MOSFET N-CH 800V 8A TO251-3

Infineon Technologies
3,443 -

RFQ

IPU80R600P7AKMA1

データシート

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS80R600P7AKMA1

IPS80R600P7AKMA1

MOSFET N-CH 800V 8A TO251-3

Infineon Technologies
19,480 -

RFQ

IPS80R600P7AKMA1

データシート

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL65R650C6SATMA1

IPL65R650C6SATMA1

MOSFET N-CH 650V 6.7A THIN-PAK

Infineon Technologies
3,034 -

RFQ

IPL65R650C6SATMA1

データシート

Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 6.7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 21 nC @ 10 V ±20V 440 pF @ 100 V - 56.8W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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