写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF2903ZPBFMOSFET N-CH 30V 75A TO220AB Infineon Technologies |
2,958 | - |
RFQ |
![]() データシート |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240 nC @ 10 V | ±20V | 6320 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRL40B209MOSFET N-CH 40V 195A TO220AB Infineon Technologies |
2,683 | - |
RFQ |
![]() データシート |
Tube | HEXFET®, StrongIRFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.25mOhm @ 100A, 10V | 2.4V @ 250µA | 270 nC @ 4.5 V | ±20V | 15140 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPB80N06S208ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,542 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 7.7mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
AUIRFR4615TRLMOSFET N-CH 150V 33A DPAK Infineon Technologies |
3,932 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IPA60R360CFD7XKSA1MOSFET N-CH 650V 5A TO220 Infineon Technologies |
2,043 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 14 nC @ 10 V | ±20V | 679 pF @ 400 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF2804LPBFMOSFET N-CH 40V 75A TO262 Infineon Technologies |
3,110 | - |
RFQ |
![]() データシート |
Bulk,Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | - | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IPD70R950CEAUMA1MOSFET N-CH 700V 7.4A TO252-3 Infineon Technologies |
1,500 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | Super Junction | 68W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
![]() |
BSC016N06NSSCATMA1TRENCH 40<-<100V PG-WSON-8 Infineon Technologies |
2,626 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 234A (Tc) | 6V, 10V | 1.6mOhm @ 50A, 10V | 3.3V @ 95µA | 95 nC @ 10 V | ±20V | 6500 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IPA600N25NM3SXKSA1MOSFET N-CH 250V 15A TO220 Infineon Technologies |
3,796 | - |
RFQ |
![]() データシート |
Bulk,Tube | OptiMOS™3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 15A (Tc) | 10V | 60mOhm @ 15A, 10V | 4V @ 89µA | 29 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRF5210STRRPBFMOSFET P-CH 100V 38A D2PAK Infineon Technologies |
3,312 | - |
RFQ |
![]() データシート |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 2780 pF @ 25 V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IPA65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220 Infineon Technologies |
2,570 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220-3 Infineon Technologies |
3,327 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPI90N06S4L04AKSA2MOSFET N-CH 60V 90A TO262-3 Infineon Technologies |
9,000 | - |
RFQ |
![]() データシート |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
AUIRLR3110ZTRLMOSFET N-CH 100V 63A DPAK Infineon Technologies |
2,013 | - |
RFQ |
![]() データシート |
Tape & Reel (TR) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | - | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | - | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IPP60R385CPXKSA1MOSFET N-CH 650V 9A TO220-3 Infineon Technologies |
2,276 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPA90R800C3XKSA2MOSFET N-CH 900V 6.9A TO220 Infineon Technologies |
3,890 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPP90R800C3XKSA2MOSFET N-CH 900V 6.9A TO220-3 Infineon Technologies |
3,419 | - |
RFQ |
![]() データシート |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IPB80N06S2H5AUMA1IC MOSFET N-CH TO263-3 Infineon Technologies |
2,628 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
AUXVNGP4062D-EIC DISCRETE Infineon Technologies |
3,339 | - |
RFQ |
Tube | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() |
AUXHKGP4062D-EIC DISCRETE Infineon Technologies |
2,814 | - |
RFQ |
Tube | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |