トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW60R075CPXK

IPW60R075CPXK

IPW60R075 - 600V COOLMOS N-CHANN

Infineon Technologies
3,991 -

RFQ

IPW60R075CPXK

データシート

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S2-H4

IPB80N04S2-H4

IPB80N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
2,561 -

RFQ

IPB80N04S2-H4

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP001385054

SP001385054

IPP60R120C7XKSA1 - 600V COOLMOS

Infineon Technologies
3,898 -

RFQ

SP001385054

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD30N06S2L13ATMA1

IPD30N06S2L13ATMA1

IPD30N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,885 -

RFQ

IPD30N06S2L13ATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW60R190E6

IPW60R190E6

600V, 0.19OHM, N-CHANNEL MOSFET

Infineon Technologies
2,986 -

RFQ

IPW60R190E6

データシート

Bulk * Active - - - - - - - - - - - - -
IPW60R165CP

IPW60R165CP

21A, 600V, 0.165OHM, N-CHANNEL M

Infineon Technologies
3,083 -

RFQ

IPW60R165CP

データシート

Bulk * Active - - - - - - - - - - - - - -
IPAW60R280P7SXKSA1

IPAW60R280P7SXKSA1

MOSFET N-CH 600V 12A TO220

Infineon Technologies
2,037 -

RFQ

IPAW60R280P7SXKSA1

データシート

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 24W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA80R1K4P7XKSA1

IPA80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3F

Infineon Technologies
475 -

RFQ

IPA80R1K4P7XKSA1

データシート

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies
412 -

RFQ

IPP80R1K4P7XKSA1

データシート

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF4104PBF

IRF4104PBF

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
998 -

RFQ

IRF4104PBF

データシート

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS60R210PFD7SAKMA1

IPS60R210PFD7SAKMA1

MOSFET N-CH 650V 16A TO251-3

Infineon Technologies
308 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPI029N06NAKSA1

IPI029N06NAKSA1

MOSFET N-CH 60V 24A/100A TO262-3

Infineon Technologies
246 -

RFQ

IPI029N06NAKSA1

データシート

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 100A (Tc) 6V, 10V 2.9mOhm @ 100A, 10V 2.8V @ 75µA 56 nC @ 10 V ±20V 4100 pF @ 30 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN60R210PFD7SXKSA1

IPAN60R210PFD7SXKSA1

MOSFET N-CH 650V 16A TO220

Infineon Technologies
840 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 25W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD12CN10NG

IPD12CN10NG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,877 -

RFQ

IPD12CN10NG

データシート

Bulk * Active - - - - - - - - - - - - - -
IPI70R950CE

IPI70R950CE

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,108 -

RFQ

IPI70R950CE

データシート

Bulk * Active - - - - - - - - - - - - - -
IPA057N06N3G

IPA057N06N3G

IPA057N06 - 12V-300V N-CHANNEL P

Infineon Technologies
2,436 -

RFQ

IPA057N06N3G

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD80R4K5P7

IPD80R4K5P7

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,078 -

RFQ

IPD80R4K5P7

データシート

Bulk * Active - - - - - - - - - - - - - -
IPG20N04S4-08

IPG20N04S4-08

IPG20N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
3,947 -

RFQ

IPG20N04S4-08

データシート

Bulk * Active - - - - - - - - - - - - - -
IPW60R060C7

IPW60R060C7

IPW60R060 - 600V COOLMOS N-CHANN

Infineon Technologies
3,604 -

RFQ

IPW60R060C7

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD25N06S2-40ATMA1

IPD25N06S2-40ATMA1

IPD25N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,775 -

RFQ

IPD25N06S2-40ATMA1

データシート

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 13A, 10V 4V @ 26µA 18 nC @ 10 V ±20V 513 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ 日平均RFQ
20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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