トランジスタ - FET、MOSFET - シングル

写真: メーカー部品番号 在庫状況 価格 数量 データシート Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3705Z

IRL3705Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,294 -

RFQ

IRL3705Z

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705ZL

IRL3705ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
2,165 -

RFQ

IRL3705ZL

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIB9343

IRLIB9343

MOSFET P-CH 55V 14A TO220AB FP

Infineon Technologies
2,945 -

RFQ

IRLIB9343

データシート

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 33W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLR4343

IRLR4343

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
2,230 -

RFQ

IRLR4343

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRLU2905Z

IRLU2905Z

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
2,315 -

RFQ

IRLU2905Z

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH8311TRPBF

IRFH8311TRPBF

MOSFET N CH 30V 32A PQFN5X6

Infineon Technologies
213 -

RFQ

IRFH8311TRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 169A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.35V @ 100µA 66 nC @ 10 V ±20V 4960 pF @ 10 V - 3.6W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPS04N60C3E8177AKMA1

SPS04N60C3E8177AKMA1

LOW POWER_LEGACY

Infineon Technologies
4,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPD040N03LGATMA1

IPD040N03LGATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies
985 -

RFQ

IPD040N03LGATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R600CPXKSA1

IPA60R600CPXKSA1

IPA60R600 - 600V COOLMOS N-CHANN

Infineon Technologies
8,500 -

RFQ

IPA60R600CPXKSA1

データシート

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR825TRPBF

IRFR825TRPBF

MOSFET N-CH 500V 6A DPAK

Infineon Technologies
671 -

RFQ

IRFR825TRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.3Ohm @ 3.7A, 10V 5V @ 250µA 34 nC @ 10 V ±20V 1346 pF @ 25 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7809AVTRPBF

IRF7809AVTRPBF

MOSFET N-CH 30V 13.3A 8SO

Infineon Technologies
413 -

RFQ

IRF7809AVTRPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD07N60S5AATMA1

SPD07N60S5AATMA1

SPD07N60S5 - COOL MOS POWER MOSF

Infineon Technologies
3,305 -

RFQ

SPD07N60S5AATMA1

データシート

Bulk * Active - - - - - - - - - - - - - -
SPU02N60S5XK

SPU02N60S5XK

SPU02N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
1,493 -

RFQ

SPU02N60S5XK

データシート

Bulk * Active - - - - - - - - - - - - - -
IPD180N10N3GATMA1

IPD180N10N3GATMA1

MOSFET N-CH 100V 43A TO252-3

Infineon Technologies
620 -

RFQ

IPD180N10N3GATMA1

データシート

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1800 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305TRLPBF

IRFR5305TRLPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
233 -

RFQ

IRFR5305TRLPBF

データシート

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU4343

IRLU4343

MOSFET N-CH 55V 26A I-PAK

Infineon Technologies
2,884 -

RFQ

IRLU4343

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU9343

IRLU9343

MOSFET P-CH 55V 20A I-PAK

Infineon Technologies
3,477 -

RFQ

IRLU9343

データシート

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLZ44Z

IRLZ44Z

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
2,731 -

RFQ

IRLZ44Z

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ44ZL

IRLZ44ZL

MOSFET N-CH 55V 51A TO262

Infineon Technologies
3,223 -

RFQ

IRLZ44ZL

データシート

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714ZSTRL

IRL3714ZSTRL

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
3,923 -

RFQ

IRL3714ZSTRL

データシート

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) - 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V - 550 pF @ 10 V - - - Surface Mount
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20,000.000
20,000.000 標準製品ユニット
1800+
1800+ 世界中のメーカー
15,000+
15,000+ 在庫倉庫
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