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トランジスタ - FET、MOSFET - シングル
| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPHR7904PB,L1XHQMOSFET N-CH 40V 150A 8SOP Toshiba Semiconductor and Storage |
2,291 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
|
TK1R5R04PB,LXGQMOSFET N-CH 40V 160A D2PAK Toshiba Semiconductor and Storage |
3,068 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | 175°C | Surface Mount |
|
TK58A06N1,S4XMOSFET N-CH 60V 58A TO220SIS Toshiba Semiconductor and Storage |
2,801 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK4R3A06PL,S4XMOSFET N-CH 60V 68A TO220SIS Toshiba Semiconductor and Storage |
2,219 | - |
RFQ |
データシート |
Tube | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 68A (Tc) | 4.5V, 10V | 7.2mOhm @ 15A, 4.5V | 2.5V @ 500µA | 48.2 nC @ 10 V | ±20V | 3280 pF @ 30 V | - | 36W (Tc) | 175°C (TJ) | Through Hole |
|
|
TK650A60F,S4XMOSFET N-CH 600V 11A TO220SIS Toshiba Semiconductor and Storage |
3,425 | - |
RFQ |
データシート |
Tube | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
|
TK30E06N1,S1XMOSFET N-CH 60V 43A TO220 Toshiba Semiconductor and Storage |
3,640 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Ta) | 10V | 15mOhm @ 15A, 10V | 4V @ 200µA | 16 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 53W (Tc) | 150°C (TJ) | Through Hole |
|
TPWR7904PB,L1XHQMOSFET N-CH 40V 150A 8DSOP Toshiba Semiconductor and Storage |
3,161 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount |
|
|
TK32E12N1,S1XMOSFET N CH 120V 60A TO-220 Toshiba Semiconductor and Storage |
2,959 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 98W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK32A12N1,S4XMOSFET N-CH 120V 32A TO220SIS Toshiba Semiconductor and Storage |
3,907 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK1K2A60F,S4XMOSFET N-CH 600V 6A TO220SIS Toshiba Semiconductor and Storage |
3,249 | - |
RFQ |
データシート |
Tube | U-MOSIX | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Ta) | 10V | 1.2Ohm @ 3A, 10V | 4V @ 630µA | 21 nC @ 10 V | ±30V | 740 pF @ 300 V | - | 35W (Tc) | 150°C | Through Hole |
|
|
TK11A65W,S5XMOSFET N-CH 650V 11.1A TO220SIS Toshiba Semiconductor and Storage |
148 | - |
RFQ |
データシート |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
|
TPWR8503NL,L1QMOSFET N-CH 30V 150A 8DSOP Toshiba Semiconductor and Storage |
2,014 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TPW4R50ANH,L1QMOSFET N-CH 100V 92A 8DSOP Toshiba Semiconductor and Storage |
2,840 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount |
|
2SK3564(STA4,Q,M)MOSFET N-CH 900V 3A TO220SIS Toshiba Semiconductor and Storage |
3,403 | - |
RFQ |
データシート |
Tube | π-MOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 17 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
|
|
2SK3566(STA4,Q,M)MOSFET N-CH 900V 2.5A TO220SIS Toshiba Semiconductor and Storage |
3,844 | - |
RFQ |
データシート |
Tube | π-MOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK3R1A04PL,S4XMOSFET N-CH 40V 82A TO220SIS Toshiba Semiconductor and Storage |
2,788 | - |
RFQ |
データシート |
Tube | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4 nC @ 10 V | ±20V | 4670 pF @ 20 V | - | 36W (Tc) | 175°C (TJ) | Through Hole |
|
|
TPH4R50ANH,L1QMOSFET N CH 100V 60A SOP ADV Toshiba Semiconductor and Storage |
3,109 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount |
|
|
TK5R3A06PL,S4XX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,804 | - |
RFQ |
データシート |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 4.5V, 10V | 5.3mOhm @ 28A, 10V | 2.5V @ 300µA | 36 nC @ 10 V | ±20V | 2380 pF @ 30 V | - | 36W (Tc) | 175°C | Through Hole |
|
|
TK22E10N1,S1XMOSFET N CH 100V 52A TO220 Toshiba Semiconductor and Storage |
3,589 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 72W (Tc) | 150°C (TJ) | Through Hole |
|
|
TK22A10N1,S4XMOSFET N-CH 100V 22A TO220SIS Toshiba Semiconductor and Storage |
2,965 | - |
RFQ |
データシート |
Tube | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 30W (Tc) | 150°C (TJ) | Through Hole |
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