Rohm Semiconductor RS1E280GNTB

部品番号
RS1E280GNTB
メーカー
Rohm Semiconductor
カテゴリ:
トランジスタ - FET、MOSFET - シングル
パッケージ
8-HSOP
データシート
日文版RS1E280GNTB.pdf
説明
MOSFET N-CH 30V 28A 8HSOP
数量

単価$0

合計価格$0

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payment
配送
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Product details

1. How to order RS1E280GNTB on 富東通信(深セン)グループ株式有限公司?

Currently, 富東通信(深セン)グループ株式有限公司 only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does 富東通信(深セン)グループ株式有限公司 guarantee that RS1E280GNTB is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the RS1E280GNTB. All suppliers must pass our qualification reviews before they can publish their products including RS1E280GNTB on 富東通信(深セン)グループ株式有限公司; we pay more attention to the channels and quality of RS1E280GNTB products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the RS1E280GNTB price and inventory displayed accurate?

The price and inventory of RS1E280GNTB fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of RS1E280GNTB?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RS1E280GNTB we delivered, we will accept the replacement or return of the RS1E280GNTB only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RS1E280GNTB.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as RS1E280GNTB pin diagram, RS1E280GNTB datasheet?

If you need any after-sales service, please do not hesitate to contact us.

画像 R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
部品番号 R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
メーカー Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 28A (Ta) 28A (Ta) 28A (Ta) 28A (Ta) 28A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 2.6mOhm @ 28A, 10V 2.6mOhm @ 28A, 10V 2.6mOhm @ 28A, 10V 2.6mOhm @ 28A, 10V 2.6mOhm @ 28A, 10V
Vgs(th)(Max)@Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 36 nC @ 10 V 36 nC @ 10 V 36 nC @ 10 V 36 nC @ 10 V 36 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2300 pF @ 15 V 2300 pF @ 15 V 2300 pF @ 15 V 2300 pF @ 15 V 2300 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 3W (Ta), 31W (Tc) 3W (Ta), 31W (Tc) 3W (Ta), 31W (Tc) 3W (Ta), 31W (Tc) 3W (Ta), 31W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

RS1E280GNTB 関連情報

以下の部品が含まれています "RS1E280GNTB" ISSI、インテグレーテッド・シリコン・ソリューション・インク内 RS1E280GNTB.

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