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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-15ETL06-N3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,964 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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VS-15TQ060-N3DIODE SCHOTTKY 60V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 820 mV @ 30 A | |
|
|
VS-18TQ040-N3DIODE SCHOTTKY 40V 18A TO220AC Vishay General Semiconductor - Diodes Division |
2,297 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 40 V | 40 V | 18A | -55°C ~ 175°C | 720 mV @ 36 A | |
|
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VS-19TQ015-N3DIODE SCHOTTKY 15V 19A TO220AC Vishay General Semiconductor - Diodes Division |
3,711 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 2000pF @ 5V, 1MHz | - | 10.5 mA @ 15 V | 15 V | 19A | -55°C ~ 125°C | 460 mV @ 38 A | |
|
|
VS-6TQ040-N3DIODE SCHOTTKY 40V 6A TO220AC Vishay General Semiconductor - Diodes Division |
3,840 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
|
VS-8ETH03-N3DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,556 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 27 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
|
VS-8ETL06-N3DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 170 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
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VS-8ETU04-N3DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
|
VS-8TQ060-N3DIODE GEN PURP 60V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
|
|
VS-8TQ100-N3DIODE SCHOTTKY 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,848 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 100 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A | |
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VS-HFA04TB60-N3DIODE GEN PURP 600V 4A TO220AC Vishay General Semiconductor - Diodes Division |
2,800 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A | |
|
VS-HFA08TA60C-N3DIODE GEN PURP 600V 4A TO220AB Vishay General Semiconductor - Diodes Division |
3,567 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 155 ns | 3 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.8 V @ 4 A |
|
|
VS-HFA15TB60-N3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,563 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.7 V @ 15 A |
|
|
VS-HFA16TB120-N3DIODE GEN PURP 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
データシート |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A |
|
GPP60A-E3/73DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
1N4937GPEHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
BY229B-600HE3/81DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,867 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 10 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A |
|
|
GPP60AHE3/73DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
3,878 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 50 V | 50 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
|
1N4937GPHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,955 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BY229B-800-E3/81DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,844 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 10 µA @ 800 V | 800 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A |
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