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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BY251GPHE3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,761 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
GPP60DHE3/73DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,453 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
1N4947GPHE3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,431 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BY252GP-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,692 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
GPP60G-E3/73DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
3,169 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
|
1N4948GPHE3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,016 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BY252GPHE3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,812 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
GPP60GHE3/73DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
データシート |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
1N5059GPHE3/54DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,296 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BY253GP-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,963 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
GUR460-E3/73DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,243 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 4A | - | 1.28 V @ 4 A | ||
|
|
1N5060GPHE3/54DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BY253GPHE3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,460 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
M100J-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,263 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
1N5061GPHE3/54DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BY254GP-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,609 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
VS-8EWF12STRPBFDIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,441 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 100 µA @ 1200 V | 1200 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A | |
|
|
VS-8EWF12STRRPBFDIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,257 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 100 µA @ 1200 V | 1200 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A | |
|
|
VS-8EWS08STRLPBFDIODE GEN PURP 800V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,905 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 25 ns | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-6EVL06HM3/IDIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,748 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.35 V @ 6 A |
- 1500+ 日平均RFQ
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