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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-30ETH06-1PBFDIODE ULTRA FAST 600V 30A TO262 Vishay General Semiconductor - Diodes Division |
2,902 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | - | 2.6 V @ 30 A |
|
VS-STPS20L15GTRLPDIODE SCHOTTKY 15V 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,790 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 520 mV @ 40 A |
|
|
VS-STPS20L15GTRRPDIODE SCHOTTKY 15V 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,545 | - |
RFQ |
データシート |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 2000pF @ 5V, 1MHz | - | 10 mA @ 15 V | 15 V | 20A | -55°C ~ 125°C | 520 mV @ 40 A |
|
VS-10ETF02PBFDIODE GEN PURP 200V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,241 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-10ETF02SPBFDIODE GEN PURP 200V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,685 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-10ETF04PBFDIODE GEN PURP 400V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,843 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 200 ns | 100 µA @ 200 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
MUR160-E3/73DIODE GEN PURP 600V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,784 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
|
1N5615GPHE3/54DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,552 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
VS-10ETF04SPBFDIODE GEN PURP 400V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,857 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 200 ns | 100 µA @ 200 V | 400 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
BY398P-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,407 | - |
RFQ |
データシート |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 500 ns | 10 µA @ 400 V | 400 V | 3A | -50°C ~ 125°C | 1.25 V @ 3 A | |
|
|
VS-30ETH06SPBFDIODE ULTRA FAST 600V 30A D2PAK Vishay General Semiconductor - Diodes Division |
2,378 | - |
RFQ |
データシート |
- | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A | |
|
|
P300J-E3/73DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,092 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VS-10ETF10SPBFDIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,693 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
VS-10ETF12SPBFDIODE GEN PURP 1.2KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 310 ns | 100 µA @ 1000 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
|
VS-10ETS08SPBFDIODE GEN PURP 800V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
|
1N5617GPHE3/54DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,795 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BY448GPHE3/54DIODE GEN PURP 1.65KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
3,702 | - |
RFQ |
データシート |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 20 µs | 5 µA @ 1650 V | 1650 V | 1.5A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
VS-10ETS10SPBFDIODE GEN PURP 1KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,400 | - |
RFQ |
データシート |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
VS-30EPH06PBFDIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,123 | - |
RFQ |
データシート |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
VS-10TQ035-N3DIODE SCHOTTKY 35V 10A TO-220AC Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 40 V | 35 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
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