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| 写真: | メーカー部品番号 | 在庫状況 | 価格 | 数量 | データシート | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-20ETF06SLHM3DIODES - D2PAK-E3 Vishay General Semiconductor - Diodes Division |
2,168 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.67 V @ 60 A |
|
ES3C-E3/57TDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
442 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
BY500-100-E3/73DIODE GEN PURP 100V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,770 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 100 V | 100 V | 5A | 125°C (Max) | 1.35 V @ 5 A | |
|
GUR5H60HE3/45DIODE GEN PURP 600V 5A TO220AC Vishay General Semiconductor - Diodes Division |
3,827 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.8 V @ 5 A | |
|
|
BY500-400-E3/73DIODE GEN PURP 400V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 400 V | 400 V | 5A | -50°C ~ 125°C | 1.35 V @ 5 A | |
|
SS10PH9-M3/86ADIODE SCHOTTKY 90V 10A TO277A Vishay General Semiconductor - Diodes Division |
238 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 10 µA @ 90 V | 90 V | 10A | -55°C ~ 175°C | 880 mV @ 10 A |
|
1N4935-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
158 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A | |
|
VS-5EWL06FNTR-M3DIODE GEN PURP 600V 5A DPAK Vishay General Semiconductor - Diodes Division |
475 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 145 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.2 V @ 5 A |
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|
V4PAN50-M3/IDIODE SCHOTTKY 50V 3A DO221BC Vishay General Semiconductor - Diodes Division |
311 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 480pF @ 4V, 1MHz | - | 600 µA @ 50 V | 50 V | 3A | -40°C ~ 150°C | 430 mV @ 2 A |
|
|
GURB5H60HE3/45DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
3,292 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.8 V @ 5 A | |
|
|
V8P12-M3/86ADIODE SCHOTTKY 8A 120V TO-277A Vishay General Semiconductor - Diodes Division |
457 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 840 mV @ 8 A |
|
|
BY500-600-E3/73DIODE GEN PURP 600V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,530 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 600 V | 600 V | 5A | 125°C (Max) | 1.35 V @ 5 A | |
|
GURF5H60-E3/45DIODE GEN PURP 600V 5A ITO220AC Vishay General Semiconductor - Diodes Division |
3,267 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.8 V @ 5 A | |
|
|
BY500-800-E3/73DIODE GEN PURP 800V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,275 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 28pF @ 4V, 1MHz | 200 ns | 10 µA @ 800 V | 800 V | 5A | 125°C (Max) | 1.35 V @ 5 A | |
|
|
GURF5H60HE3/45DIODE GEN PURP 600V 5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.8 V @ 5 A | |
|
VS-10ETF02FPPBFDIODE GEN PURP 200V 10A TO220FP Vishay General Semiconductor - Diodes Division |
2,720 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 200 ns | - | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
BYD13DGP-E3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,850 | - |
RFQ |
データシート |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
M2035S-E3/4WDIODE SCHOTTKY 35V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,672 | - |
RFQ |
データシート |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 700 mV @ 20 A | |
|
CSA2J-E3/IDIODE GPP 2A 600V DO-214AC SMA Vishay General Semiconductor - Diodes Division |
256 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 11pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
|
SS12P2L-M3/86ADIODE SCHOTTKY 20V 12A TO277A Vishay General Semiconductor - Diodes Division |
118 | - |
RFQ |
データシート |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 930pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 12A | -55°C ~ 150°C | 560 mV @ 12 A |
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